| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Single Timer • High-Current Drive Capability: 200 mA • Adjustable Duty Cycle • Temperature Stability of 0.005%/°C • Timing From μs to Hours • Turn off Time Less Than 2 μs Applications • Precision Timing • Pulse Generation • Delay Generation • Sequential Timing D |
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Fairchild Semiconductor |
Single Timer |
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Fairchild Semiconductor |
Single Timer • High-Current Drive Capability: 200 mA • Adjustable Duty Cycle • Temperature Stability of 0.005%/°C • Timing From μs to Hours • Turn off Time Less Than 2 μs Applications • Precision Timing • Pulse Generation • Delay Generation • Sequential Timing D |
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Fairchild Semiconductor |
NPN General Purpose Amplifier operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Units VCEO VCBO VEBO IC TJ, Tstg(2) Collector-Emitter Voltage Colle |
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Fairchild Semiconductor |
Digitally Programmable TinyBuck Regulator Fixed-Frequency Operation: 2.4 MHz Best-in-Class Load Transient Continuous Output Current Capability: 5 A Pulse Current Capability: 6.5 A (05 Option) 2.5 V to 5.5 V Input Voltage Range Digitally Programmable Output Voltage: - 00/01/03/05/ |
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Fairchild Semiconductor |
SINGLE TIMER • High Current Drive Capability (= 200mA) • Adjustable Duty Cycle • Temperature Stability of 0.005%/°C • Timing From µSec To Hours • Turn Off Time Less Than 2µSec 8 SOP APPLICATIONS • Precision Timing • Pulse Generation • Time Delay Generation • |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Amplifier Transistor • Collector-Emitter Voltage: VCEO = 140 V 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number 2N5550BU 2N5550TA 2N5550TAR 2N5550TF 2N5550TFR Top Mark 2N5550 2N5550 2N5550 2N5550 2N5550 Package TO-92 3 |
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Fairchild Semiconductor |
Single Timer • • • • • High Current Drive Capability (200mA) Adjustable Duty Cycle Temperature Stability of 0.005%/°C Timing From µSec to Hours Turn off Time Less Than 2µSec Description The LM555/NE555/SA555 is a highly stable controller capable of producing acc |
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Fairchild Semiconductor |
Single Timer • High Current Drive Capability (200mA) • Adjustable Duty Cycle • Temperature Stability of 0.005%/°C • Timing From µSec to Hours • Turn off Time Less Than 2µSec Applications • Precision Timing • Pulse Generation • Time Delay Generation • Sequential T |
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Fairchild Semiconductor |
Single Timer • High Current Drive Capability (200mA) • Adjustable Duty Cycle • Temperature Stability of 0.005%/°C • Timing From µSec to Hours • Turn off Time Less Than 2µSec Applications • Precision Timing • Pulse Generation • Time Delay Generation • Sequential T |
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Fairchild Semiconductor |
NPN Silicon Transistor • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability Application • Electronic Ballast • Switch Mode Power Supplies 1 B 1 Marking : J5555 1. Base 2. Collector 3. Emitter C2 E3 Ordering Information Part Number FJD5555TM Mark |
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Fairchild Semiconductor |
NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package V, IC = 50mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA VCB = 10V, f = 1MHz VCB = 0.5V, f = 1MHz VCE = 10V, IC = 10mA f = 100MHz VCE = 5V, IC = 200µA f = 1MHz, RS = 2kΩ, B = 200Hz VCE = 10V, IC = 1mA f = 1KHz 50 1 |
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Fairchild Semiconductor |
2A DDR Bus Termination Regulator • • • • • • • • • • • • • Can source and sink up to 2A continous, 3A peak No heatsink required Integrated Power MOSFETs Generates termination voltages for DDR SDRAM VREF input available for external voltage divider Separate voltages for VCCQ and PVDD |
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Fairchild Semiconductor |
Amplifier Transistor mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VCE=5V, IC=250µA, RS=1KΩ, f=10Hz to 15.7KMz 100 80 80 30 Min. 180 160 6 50 50 250 0.15 0.2 1 1 300 6 8 V V V V MHz pF dB Max. Units V V V nA nA VCE (sat) VBE (sat) f |
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Fairchild Semiconductor |
NPN General Purpose Amplifier onditions IC = 1mA, IB = 0 IC = 100µA, IE = 0 IC = 10µA, IC = 0 VCB = 120V VCB = 120V, Ta = 100°C VEB = 4V VCE = 5V, IC = 1mA hFE1(Die1)/hFE1(Die2) VCE = 5V, IC = 10mA hFE2(Die1)/hFE2(Die2) Min. 160 180 6 Max Units V V V 50 50 50 80 0.9 80 0.95 1 |
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Fairchild Semiconductor |
NPN Silicon Transistor • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability Application • Electronic Ballast • Switched Mode Power Supplies June 2013 1 D2-PAK 1.Base 2.Collector 3.Emitter 1 B C2 E3 Ordering Information Part Number FJB5555TM Ma |
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Fairchild Semiconductor |
NPN Silicon Transistor • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability Application • Electronic Ballast • Switch Mode Power Supplies 1 TO-220 1.Base 2.Collector 3.Emitter 1 B C2 E3 Ordering Information Part Number FJP5555TU Marking J5555 |
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Fairchild Semiconductor |
High Voltage Switch Mode Application 45mA, IB2=0.5A RL=250Ω VCC=250V, IC=2.5A IB1=0.5A, IB2=1.0A RL=100Ω Min. 1050 400 14 10 20 Typ. Max. Units V V V Current Gain 40 0.5 1.5 1.2 45 1.0 1.2 0.3 2.0 2.5 0.3 V V V pF µs µs µs µs µs µs Collector-Emitter Saturation Voltage Base-Emitte |
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Fairchild Semiconductor |
1.8V / 3.0V SIM Card Power Supply and Level Shifter Supports 1.8V or 3.0V SIM Cards LDO Supplies >50mA Under 1.8V and 3.0V Built-in Pull-up Resistor for I/O Pin in Both Directions ESD Protection: 8kV (Human Body Model, According to ISO-7816 Specifications) Supports Clock 5MHz Supports |
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Fairchild Semiconductor |
Single Timer • High Current Drive Capability (200mA) • Adjustable Duty Cycle • Temperature Stability of 0.005%/°C • Timing From µSec to Hours • Turn off Time Less Than 2µSec Applications • Precision Timing • Pulse Generation • Time Delay Generation • Sequential T |
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