| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
FQP16N25 • 16 A, 250 V, RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 8.0 A • Low Gate Charge (Typ. 27 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS |
|
|
|
|
Fairchild Semiconductor |
150V N-Channel MOSFET 6 6 + < 6 < !$ : + 1-2)74 1-&**74 : &)* && ' 8 9) 98 2 ±2) |
|
|
|
|
Fairchild Semiconductor |
MOSFET • RDS(on) = 380 mΩ (Max.) @ VGS = 10 V, ID = 8 A • Low Gate Charge (Typ. 32 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply November 2013 Description UniFETTM MOSFET is Fair |
|
|
|
|
Fairchild Semiconductor |
500V N-Channel MOSFET 1,.(62 1,%))62 7 ()) %& %) &8 ±-) * ' ' ' * = ' = *5 ? ?56 6 6 9 * 7 '! : ' |
|
|
|
|
Fairchild Semiconductor |
150V N-Channel MOSFET , 6 6 , = 6 = !$ ; , 1.2*:4 1.&++:4 ; &*+ &' ( && ' '* ' ± |
|
|
|
|
Fairchild Semiconductor |
MOSFET Max rS1S2(on) = 23 m at VGS = 4.5 V, IS1S2 = 1 A Max rS1S2(on) = 25 m at VGS = 4 V, IS1S2 = 1 A Max rS1S2(on) = 28 m at VGS = 3.1 V, IS1S2 = 1 A Max rS1S2(on) = 33 m at VGS = 2.5 V, IS1S2 = 1 A Occupies only 2.2 mm2 of PCB area Ultra- |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET |
|
|
|
|
Fairchild Semiconductor |
N-Channel Power MOSFET • 16A, 50V • rDS(ON) = 0.047Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” |
|
|
|
|
Fairchild Semiconductor |
MOSFET • RDS(on) = 380 mΩ (Max.) @ VGS = 10 V, ID = 8 A • Low Gate Charge (Typ. 32 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply November 2013 Description UniFETTM MOSFET is Fair |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 3.7 A, 100 V. RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6.0 V • High performance trench technology for extremely low RDS(ON) • Low gate charge (23nC typical) • High power and current handling capability • Fast switching speed. Applicati |
|
|
|
|
Fairchild Semiconductor |
250V N-Channel MOSFET .&++74 8 *(+ &' ( && 3 39 ±/+ , ) ) ) , = ) = ,$ @ @$7 7 7 : , 8 )! ; )! -!)! ; |
|
|
|
|
Fairchild Semiconductor |
150V N-Channel MOSFET , = 6 = !$ ; , 1.2*:4 1.&++:4 ; &*+ &' ( && ' '* ' ±2* , ) |
|
|
|
|
Fairchild Semiconductor |
250V N-Channel MOSFET • 16 A, 250 V, RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 8.0 A • Low Gate Charge (Typ. 27 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS |
|
|
|
|
Fairchild Semiconductor |
250V N-Channel MOSFET 2-0**74 9 )'* &' 8* .: ±.* + ( ( ( + = ( = +$ ? ?$7 7 7 ; + 9 (! < (! ,!(! < |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 650V @ TJ = 150°C • Typ. RDS(on) = 220 mΩ • Ultra Low Gate Charge (Typ. Qg = 55 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 110 pF ) • 100% Avalanche Tested Applications • Solar Inverter • AC-DC Power Supply Description SuperFET® MO |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 650V @ TJ = 150°C • Typ. RDS(on) = 220 mΩ • Ultra Low Gate Charge (Typ. Qg = 55 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 110 pF ) • 100% Avalanche Tested Applications • Solar Inverter • AC-DC Power Supply Description SuperFET® MO |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate charge ( typical 32 nC) • Low Crss ( typical 20 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect |
|
|
|
|
Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. Rds(on)=0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested September 2006 TM Description SuperFETTM is, Farichild’s proprietary, new generation of |
|
|
|
|
Fairchild Semiconductor |
600V N-Channel MOSFET • RDS(on) = 170 mΩ (Typ.) @ VGS = 10 V, ID = 8 A • Ultra Low Gate Charge (Typ. Qg = 40.2 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 176 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PDP TV • Lighting • Solar Invert |
|
|
|
|
Fairchild Semiconductor |
600V N-Channel MOSFET • RDS(on) = 170 mΩ (Typ.) @ VGS = 10 V, ID = 8 A • Ultra Low Gate Charge (Typ. Qg = 40.2 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 176 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PDP TV • Lighting • Solar Invert |
|