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FDP16N50 |
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| Part Number | FDP16N50 |
| Manufacturer | Fairchild Semiconductor |
| Description | TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored t... |
| Features |
• 16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate charge ( typical 32 nC) • Low Crss ( typical 20 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode p... |
| Document |
 FDP16N50 Data Sheet
PDF 1.00MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDP16AN08A0 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDP16AN08A0 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | FDP100N10 |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDP100N10 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | FDP10AN06A0 |
Fairchild Semiconductor |
N-Channel MOSFET |
|