Fairchild Semiconductor 14N fiche technique

No.	Partie #	Fabricant	Description
1	14N25	Fairchild Semiconductor	N-Channel Power MOSFET • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
2	D14N05L	Fairchild Semiconductor	RFD14N05L • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE® Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guide
3	14N36GVL	Fairchild Semiconductor	HGTP14N36G3VL • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Ignition Energy Capable Description This N -Channel IG BT is a M OS gate d, l ogic l evel d evice which is intended to be used as an ignition coil driver in auto
4	F14N05	Fairchild Semiconductor	N-Channel Power MOSFET • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
5	L14N2	Fairchild Semiconductor	HERMETIC SILICON PHOTOTRANSISTOR • Hermetically sealed package • Wide reception angle • Device can be used as a photodiode by using the collector and base leads.  2001 Fairchild Semiconductor Corporation DS300308 6/01/01 1 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSI
6	FQPF14N30	Fairchild Semiconductor	300V N-Channel MOSFET 3-174 9 ) &' '8 )8 ±)* + ( ( ( + = ( = +$ ? ?$7 7 7 : + 9(! ; (! ,!(! ;
7	FDPF14N30	Fairchild Semiconductor	N-Channel MOSFET • RDS(on) = 290 mΩ (Max.) @ VGS = 10 V, ID = 7 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 17 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • PDP TV • Uninterruptible Power Supply November 2013 Description UniFETTM MOSFE
8	L14N1	Fairchild Semiconductor	HERMETIC SILICON PHOTOTRANSISTOR • Hermetically sealed package • Wide reception angle • Device can be used as a photodiode by using the collector and base leads.  2001 Fairchild Semiconductor Corporation DS300308 6/01/01 1 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSI
9	HGT1S14N36G3VL	Fairchild Semiconductor	N-Channel IGBT • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175 C • Ignition Energy Capable o Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive
10	HGT1S14N36G3VLS	Fairchild Semiconductor	N-Channel IGBT • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175 C • Ignition Energy Capable o Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive
11	HGT1S14N37G3VLS	Fairchild Semiconductor	N-Channel IGBT include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a s
12	HGT1S14N40F3VLS	Fairchild Semiconductor	N-Channel IGBT include an active voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some specifications are unique to this automotive application and are intended to assure device survival in this harsh environment. Formerly D
13	HGTP14N36G3VL	Fairchild Semiconductor	N-Channel IGBT • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175 C • Ignition Energy Capable o Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive
14	HGTP14N37G3VL	Fairchild Semiconductor	N-Channel IGBT include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a s
15	HGTP14N40F3VL	Fairchild Semiconductor	N-Channel IGBT include an active voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some specifications are unique to this automotive application and are intended to assure device survival in this harsh environment. Formerly D
16	FQA14N30	Fairchild Semiconductor	300V N-Channel MOSFET -&63 7 ) &' /' 8* ±)* + ( ( ( + ; ( ; +$ > >$6 6 6 9 + 7(! : (! ,!(! : 7
17	FQI14N15	Fairchild Semiconductor	150V N-Channel MOSFET + 5 5 + = 5 = !$ : + 1-.)93 1-&*93 : &) &' ' &* . )6 ; ±.)
18	FQP14N15	Fairchild Semiconductor	150V N-Channel MOSFET = 5 = !$ : + 1-.)93 1-&*93 : &) &' ' &* . )6 ; ±.) + ( ( (
19	FQP14N30	Fairchild Semiconductor	300V N-Channel MOSFET 2-&73 8 ) &' ' /& 69 : ±)* + ( ( ( + = ( = +$ ? ?$7 7 7 ; + 8(! < (! ,!(! <
20	RFD14N05	Fairchild Semiconductor	14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFETs • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE ® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175o C Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards