L14N1 |
Part Number | L14N1 |
Manufacturer | Fairchild Semiconductor |
Description | The L14N1/L14N2 are silicon phototransistors mounted in a wide angle, TO-18 package. FEATURES • Hermetically sealed package • Wide reception angle • Device can be used as a photodiode by using the co... |
Features |
• Hermetically sealed package • Wide reception angle • Device can be used as a photodiode by using the collector and base leads. 2001 Fairchild Semiconductor Corporation DS300308 6/01/01 1 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14N1 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA ... |
Document |
L14N1 Data Sheet
PDF 178.90KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | L14N |
QT Optoelectronics |
HERMETIC SILICON PHOTOTRANSISTOR | |
2 | L14N1 |
QT Optoelectronics |
HERMETIC SILICON PHOTOTRANSISTOR | |
3 | L14N2 |
Fairchild Semiconductor |
HERMETIC SILICON PHOTOTRANSISTOR | |
4 | L14N2 |
QT Optoelectronics |
HERMETIC SILICON PHOTOTRANSISTOR | |
5 | L14 |
JINAN JINGHENG |
LOW VF SCHOTTKY BARRIER RECTIFIER |