| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS R |
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Fairchild Semiconductor |
IRFR120N • 8.4A, 100V • rDS(ON) = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur |
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Fairchild Semiconductor |
N-Channel Power MOSFET • 9.2A, 100V • rDS(ON) = 0.270Ω • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur |
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Fairchild Semiconductor |
N-Channel Power MOSFETs • 4.7A, 100V • rDS(ON) = 0.540Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 175oC Operating Temperature • Related Literature - TB33 |
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Fairchild Semiconductor |
Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.214Ω (Typ.) Absolute Maximum Ratings S |
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Fairchild Semiconductor |
250V N-Channel MOSFET • • • • • • 3.8A, 250V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D-PAK IRFR Series I-PAK G D S IRFU Series G! |
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Fairchild Semiconductor |
Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.197Ω (Typ.) Absolute Maximum Ratings S |
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Fairchild Semiconductor |
200V N-Channel MOSFET • • • • • • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum |
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Fairchild |
N-Channel Power MOSFET • 33A, 200V • rDS(ON) = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur |
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Fairchild Semiconductor |
Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) IRFR/U120A BVDSS = 100 V RDS(on) = 0. |
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Fairchild Semiconductor |
N-Channel Power MOSFET |
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Fairchild Semiconductor |
N-Channel Power MOSFET |
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Fairchild |
200V N-Channel MOSFET • • • • • • 32A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! TO-3P G DS IRFP Series ! S Absolute Maximum Ratings |
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Fairchild Semiconductor |
400V N-Channel MOSFET • • • • • • 4.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G! G S D-PAK IRFR Series I-PAK G D S IRFU Series ! S |
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Fairchild Semiconductor |
N-Channel Power MOSFET |
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Fairchild Semiconductor |
N-Channel Power MOSFET |
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Fairchild Semiconductor |
200V N-Channel MOSFET • • • • • • 28A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximu |
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Fairchild Semiconductor |
200V N-Channel MOSFET • • • • • • 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D-PAK IRFR Series I-PAK G D S IRFU Series G! ! |
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Fairchild Semiconductor |
Advanced Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Lower RDS(ON): 0.437Ω (Typ.) IRFW/I740A BVDSS = 400 V RD |
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Fairchild Semiconductor |
N-Channel Power MOSFET • 20A, 200V • rDS(ON) = 0.180Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • |
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