| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
500V N-Channel MOSFET • 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Dra |
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