FQP9N50C |
Part Number | FQP9N50C |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC... |
Document |
FQP9N50C Data Sheet
PDF 1.38MB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQP9N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
2 | FQP9N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
3 | FQP9N08L |
Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET | |
4 | FQP9N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
5 | FQP9N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET |