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FNK |
N-Channel Power MOSFET ● VDS =60V,ID =75A RDS(ON) < 9.4m Ω @ VGS=10V (Typ:7.5? mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipati |
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FNK |
P-Channel Power MOSFET ● VDS=-30V, ID=-70A R DS(ON) < 8.3 mΩ @ VGS=-10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat di |
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FNK |
N-Channel Power MOSFET ● VDS =30V,ID =160A RDS(ON) <2.4 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat |
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FNK |
N-Channel Power MOSFET ● VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V (Typ:5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● S |
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FNK |
N-Channel Power MOSFET ● VDS =85V,ID =210A RDS(ON) <4.1mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special proc |
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FNK |
N-Channel Power MOSFET ● VDS =20V,ID =6A RDS(ON) < 21mΩ @ VGS=4.5V RDS(ON) < 26mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Schematic diagram Application ● Power switching application ● Hard switched and |
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FNK |
N-Channel Enhancement Mode MOSFET • 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Avalanche Rated • Lead Free and Green Devices Available (RoHS Compliant) Applications • Powe |
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FNK |
N-Channel Power MOSFET ● VDS = 19.5V,ID = 5A RDS(ON) <23mΩ @ VGS=2.5V RDS(ON) < 16mΩ @ VGS=4.5V S1 S2 Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery protection ●Load switch ●Powe |
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FNK |
P-Channel Power MOSFET ● VDS = -30V,ID = -15A R DS(ON) <16 mΩ @ VGS=-10V R DS(ON) <25mΩ@ VGS =-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Uninterruptible power supp |
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FNK |
N-Channel Power MOSFET ● VDS =30V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V RDS(ON) < 8.2mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat di |
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FNK |
N-Channel Power MOSFET ● VDS = 20V,ID =6A RDS(ON) < 21mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM application ● Load switch Schematic diagram Marking and pin |
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FNK |
N-Channel MOSFET • 30V/150 A RDS(ON)=4.5mΩ ( ) @ VGS=10V RDS(ON)=6.5mΩ ( ) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Avalanche Rated • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop Computer o |
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FNK |
N-Channel Enhancement Mode MOSFET • 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Avalanche Rated • Lead Free and Green Devices Available (RoHS Compliant) Applications • Powe |
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FNK |
N-Channel Power MOSFET ● VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V (Typ:5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● S |
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FNK |
P-Channel Power MOSFET ● VDS = -20V,ID = -7A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 33mΩ @ VGS=-2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Motor drive ● Load switch ● Power management Marking and p |
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FNK |
N-Channel Enhancement Mode Power MOSFET o-Ambient (Note 2) RθJA 40 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) www.FNK-TECH.com Page 1 v1.0 Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Cha |
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FNK |
N-Channel Power MOSFET |
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FNK |
P-Channel Power MOSFET ● VDS = -30V,ID = -15A R DS(ON) < 12mΩ @ VGS=-10V R DS(ON) <17mΩ@ VGS =-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Uninterruptible power supp |
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FNK |
P-Channel Power MOSFET ● VDS=-30V, ID=-70A R DS(ON) < 8.3 mΩ @ VGS=-10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat di |
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FNK |
N-Channel Power MOSFET ● VDS =80V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.7mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● |
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