30H80A |
Part Number | 30H80A |
Manufacturer | FNK |
Description | 30H80/30H80A N-Channel Enhancement Mode MOSFET Features • 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V • Super High Dense Cell Design • Reliab... |
Features |
• 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Avalanche Rated • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop Computer or DC/DC Converters. D G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current IDP 300µs Pulse Drain Cur... |
Document |
30H80A Data Sheet
PDF 868.48KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 30H80 |
FNK |
N-Channel Enhancement Mode MOSFET | |
2 | 30H10I |
ROUM |
100A 30V N-channel Enhancement Mode Power MOSFET | |
3 | 30H10K |
TGD |
N-Channel Enhancement Mode Power MOSFET | |
4 | 30H10K |
ROUM |
100A 30V N-channel Enhancement Mode Power MOSFET | |
5 | 30H10K |
FUMAN |
N-Channel Trench Power MOSFET |