| No. | Partie # | Fabricant | Description | Fiche Technique |
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Excelics Semiconductor |
Internally Matched Power FET HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1011-2P Not recommended for new designs. Contact |
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Excelics Semiconductor |
Internally Matched Power FET • • • • • • • 12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 at PO = 25.0 dBm SCL Non-Hermetic Metal Flange Pac |
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Excelics Semiconductor |
Internally Matched Power FET • • • • • • • 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.0 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 24% Power Added Efficiency -46 dBc IM3 at PO = 22.0 dBm SCL Non-Hermetic Metal Flange Pac |
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Excelics Semiconductor |
Internally Matched Power FET HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+32.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 7.5/5.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1718A-2P Not recommended for new designs. Contac |
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Excelics Semiconductor |
Internally Matched Power FET HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43dBm TYPICAL) +30.0/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.5/5.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1819-1P Not recommended for new designs. Contact |
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Excelics Semiconductor |
4W Internally Matched Power FET • • • • • • 3.40-3.90 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 12.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency Non-Hermetic Metal Flange Package .827 .669 .120 MIN Excelics E |
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Excelics Semiconductor |
Internally Matched Power FET HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9/8dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1011-4P Not recommended for new designs. Contact fac |
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Excelics Semiconductor |
Internally Matched Power FET • • • • • • • 12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.0 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 at PO = 22.0 dBm SCL Non-Hermetic Metal Flange Pac |
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Excelics Semiconductor |
Internally Matched Power FET HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1314-2P Not recommended for new designs. Contact |
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Excelics Semiconductor |
Internally Matched Power FET HIGH PAE( 27% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+36dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1314-4P Not recommended for new designs. Contact f |
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Excelics Semiconductor |
Internally Matched Power FET HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1414-2P Not recommended for new designs. Contact |
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Excelics Semiconductor |
Internally Matched Power FET HIGH PAE( 27% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1414-4P Not recommended for new designs. Contact |
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Excelics Semiconductor |
Internally Matched Power FET • • • • • • 14.0 – 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +26.0 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 32% Power Added Efficiency Non - Hermetic Metal Flange Package 0.433 0.362 GATE YYWW SN 0 |
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Excelics Semiconductor |
Internally Matched Power FET • • • • • • • 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 23% Power Added Efficiency -46 dBc IM3 at PO = 25.0 dBm SCL Non-Hermetic Metal Flange Pac |
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Excelics Semiconductor |
Internally Matched Power FET HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43dBm TYPICAL) +30.0/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.5/5.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1718-1P Not recommended for new designs. Contact |
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Excelics Semiconductor |
Internally Matched Power FET HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33/+32.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.0/5.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1718-2P Not recommended for new designs. Contact f |
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Excelics Semiconductor |
Internally Matched Power FET HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43dBm TYPICAL) +30.5/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 7.5/6.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1718A-1P SYMB |
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Excelics Semiconductor |
Internally Matched Power FET HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43dBm TYPICAL) +30.0/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.5/5.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1818-1P Not recommended for new designs. Contact |
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Excelics Semiconductor |
Internally Matched Power FET HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.0/+32.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.0/5.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1818-2P Not recommended for new designs. Contact |
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Excelics Semiconductor |
Internally Matched Power FET HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.0/+32.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.0/5.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1819-2P Not recommended for new designs. Contact |
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