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EIB1213-2P |
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| Part Number | EIB1213-2P |
| Manufacturer | Excelics Semiconductor |
| Description | EIB1213-2P UPDATED 06/14/06 12.75-13.25GHz 2W Internally Matched Power FET FEATURES • • • • • • • 12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.0 dBm Output Power at 1dB Co... |
| Features |
• • • • • • • 12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.0 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 at PO = 22.0 dBm SCL Non-Hermetic Metal Flange Package EIB1213-2P ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP www.DataSheet4U.com Caution! ESD sensitive device. MIN 32.0 7.50 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 800mA Gain at 1dB Compression f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 800mA Gain Flatness f... |
| Document |
 EIB1213-2P Data Sheet
PDF 114.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EIB1213-4P |
Excelics Semiconductor |
Internally Matched Power FET |
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| 2 | EIB1011-2P |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 3 | EIB1011-4P |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 4 | EIB1011-4P |
Excelics Semiconductor |
10.7-11.7GHz 4W Internally Matched Power FET |
|
| 5 | EIB1314-2P |
Excelics Semiconductor |
Internally Matched Power FET |
|