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Eudyna Devices |
C-Band Internally Matched FET .c • High Output Power: P1dB = 44.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd = 37% (Typ.) e = 33.5dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.9h ~ 6.4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically |
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Eudyna Devices |
C-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FL |
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Eudyna Devices |
C-Band Internally Matched FET ・High Output Power: P1dB=47.0dBm(Typ.) ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=39%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM5964-45F is a power GaAs FET that is internally ma |
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Eudyna Devices |
C-Band Internally Matched FET ・High Output Power: P1dB=45.5dBm(Typ.) ・High Gain: G1dB=9.0dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM5964-35F is a power GaAs FET that is internally ma |
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Eudyna Devices |
C-Band Internally Matched FET .c • High Output Power: P1dB = 39.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd = 37% (Typ.) e = 28.5dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.9h ~ 6.4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically |
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Eudyna Devices |
C-Band Internally Matched FET .c • High Output Power: P1dB = 38.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd = 37% (Typ.) e = 27.5dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.9h ~ 6.4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically |
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Eudyna Devices |
C-Band Internally Matched FET .c • High Output Power: P1dB = 41.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd = 37% (Typ.) e = 30.5dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.9h ~ 6.4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically |
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Eudyna Devices |
C-Band Internally Matched FET .c • High Output Power: P1dB = 43.0dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd = 37% (Typ.) e = 32.0dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.9h ~ 6.4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically |
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Eudyna Devices |
C-Band Internally Matched FET .c • High Output Power: P1dB = 36.5dBm (Typ.) U • High Gain: G1dB =10.0dB (Typ.) 4 t • High PAE: ηadd = 37% (Typ.) e = 25.5dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.9h ~ 6.4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically a |
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Eudyna Devices |
C-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 43.0dBm (Typ.) High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FL |
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Eudyna Devices |
C-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FL |
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Eudyna Devices |
Ku-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1011-1 |
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