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FLM5964-18F |
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| Part Number | FLM5964-18F |
| Manufacturer | Eudyna Devices |
| Description | D . The FLM5964-18F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system. Item Drain-Source Voltage Gate-Source Volt... |
| Features |
.c • High Output Power: P1dB = 43.0dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd = 37% (Typ.) e = 32.0dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.9h ~ 6.4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically a DESCRIPTION D . The FLM5964-18F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system. Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition FLM5964-18F Eudyna’s stringen... |
| Document |
 FLM5964-18F Data Sheet
PDF 314.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FLM5964-18DA |
Fujitsu |
Internally Matched Power GaAs FETs |
|
| 2 | FLM5964-18F |
Fujitsu |
C-Band Internally Matched FET |
|
| 3 | FLM5964-18F |
SUMITOMO |
C-Band Internally Matched FET |
|
| 4 | FLM5964-12DA |
Fujitsu |
Internally Matched Power GaAs FETs |
|
| 5 | FLM5964-12F |
Fujitsu |
C-Band Internally Matched FET |
|