| No. | Partie # | Fabricant | Description | Fiche Technique |
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ETCTI |
Enhanced-JFET Low-Power Low-Offset Operational Amplifiers (Rev. C) |
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ETC |
N-Channel enhancement mode power field effect Transistors 2.5A VDS= 50V, ID=2.5A VGS= 0V, VDS= 25V F=1.0MHz pF ns 80 90 20 nC VDD= 300V, ID= 5A RG=25 Ω VDS= 480V, VGS= 10V ID=5A Page : 1/5 Top: 101 ID, Drain Current [ A] ID, Drain Current [ A] VGS 15V 10V 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V 101 150 |
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Texas Instruments |
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrate |
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Texas Instruments |
Enhanced CMOS Quad Differential Line Driver 1 • Meets TIA/EIA-422-B (RS-422) and ITU-T V.11 Recommendation • Interoperable With Existing 5V RS-422 Networks • Ensured VOD of 2V Min Over Operating Conditions • Balanced Output Crossover for Low EMI (Typical Within 40 mV of 50% Voltage Level) • Lo |
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ETC |
P-Channel Logic Level Enhancement Mode Field Effect Transistor rent On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 1 |
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ETCTI |
OC-48 FEC/24/12/3 Sonet/SDH Multirate Transceiver With Enhanced Jitter Toleran (Rev. B) |
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ETC |
N-channel enhancement mode Field-Effect Transistor Low gate charge Low CrssB B (typical 7.6pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking Package Halogen Free JCS2N60V-O-V-N-B JCS2N60R-O-R-N-B JCS2N60R-O-R-N-A JCS2N6 |
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ETC |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET * Simple Drive Requirement * Lower on-resistance * Fast Switching BVDSS RDS(ON) ID - 30 V 53 mΩ -5A Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pul |
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ETC |
TMP47C443N / KMP47C443N 4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com |
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ETC |
N-channel enhancement mode Field-Effect Transistor Low gate charge Low CrssB B (typical 7.6pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking Package Halogen Free JCS2N60V-O-V-N-B JCS2N60R-O-R-N-B JCS2N60R-O-R-N-A JCS2N6 |
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ETC |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET * Simple Drive Requirement * Lower on-resistance BVDSS RDS(ON) - 30 V 42 mΩ * Fast Switching ID - 5 A Package Dimensions Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous |
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ETC |
N-Channel enhancement mode power field effect Transistors 255 135 16 45 130 170 140 36 - Units () V nA uA Ω S Test Conditions () VDS= VGS,ID=250uA VGS= +30V, VDS= 0V VDS=600V ,VGS= 0V VGS= 10V,ID=3.75A VDS= 40V, ID=3.75A pF VGS= 0V, VDS= 25V F=1.0MHz ns VDD= 300V, ID= 7.5A RG=25 Ω nC VDS= 480V, VGS= 1 |
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Texas Instruments |
Precision Fahrenheit Temperature Sensors •1 Calibrated Directly in Degrees Fahrenheit • Linear 10.0 mV/°F Scale Factor • 1.0°F Accuracy Assured (at 77°F) • Rated for Full −50° to 300°F Range • Suitable for Remote Applications • Low Cost Due to Wafer-Level Trimming • Operates From 5 to 30 Vo |
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ETC |
NEW ENHANCED AT DATA BOOK |
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ETC |
N CHANNEL ENHANCEMENT MODE D MOS POWER FETS |
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ETC |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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ETCTI |
Enhanced MultiFormat Delta-Sigma Audio Digital-to-Analog Converter (Rev. A) |
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ETC |
N-Channel Enhancement Mode MOS Transistor • 200mA ID • Ultra small surface mount package • RDS(ON) < 5Ω • Pin-out compatible with most SOT23 MOSFETS Absolute Maximum Ratings Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V |
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ETC |
ENHANCED COMPUTER CONTROLLED TELETEXT CIRCUITS |
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ETC |
CMOS Enhanced Multi Interface 4 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 30 SIGNAL PIN I/O No. SIGNAL ww w.D a 81 O BPoFT 82 O BPoSE 83 I/O BPbD7 84 — VDD GND 85 — 86 I/O BPbD6 87 I/O BPbD5 88 I/O BPbD4 89 I/O BPbD3 90 I/O BPbD2 91 I/O BPbD1 92 I/O BPbD0 O HDoRTS 93 |
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