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ETC |
N-Channel enhancement mode power field effect Transistors 2.5A VDS= 50V, ID=2.5A VGS= 0V, VDS= 25V F=1.0MHz pF ns 80 90 20 nC VDD= 300V, ID= 5A RG=25 Ω VDS= 480V, VGS= 10V ID=5A Page : 1/5 Top: 101 ID, Drain Current [ A] ID, Drain Current [ A] VGS 15V 10V 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V 101 150 |
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ETC |
N-Channel enhancement mode power field effect Transistors 255 135 16 45 130 170 140 36 - Units () V nA uA Ω S Test Conditions () VDS= VGS,ID=250uA VGS= +30V, VDS= 0V VDS=600V ,VGS= 0V VGS= 10V,ID=3.75A VDS= 40V, ID=3.75A pF VGS= 0V, VDS= 25V F=1.0MHz ns VDD= 300V, ID= 7.5A RG=25 Ω nC VDS= 480V, VGS= 1 |
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