| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
ETC |
SmartACFLModem such as monitoring of local extension status without going off-hook, are also supported. Incorporating Conexant’s proprietary Digital Isolation Barrier (DIB) design (patent pending) and other innovative DAA features, the SmartDAA architecture simpli |
|
|
|
|
ETC |
SmartACFLModem such as monitoring of local extension status without going off-hook, are also supported. Incorporating Conexant’s proprietary Digital Isolation Barrier (DIB) design (patent pending) and other innovative DAA features, the SmartDAA architecture simpli |
|
|
|
|
ETC |
SmartACFLModem such as monitoring of local extension status without going off-hook, are also supported. Incorporating Conexant’s proprietary Digital Isolation Barrier (DIB) design (patent pending) and other innovative DAA features, the SmartDAA architecture simpli |
|
|
|
|
ETC |
Ku-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM8596-4F |
|
|
|
|
ETC |
X-Band Internally Matched FET ・High Output Power: P1dB=42.0dBm(Typ.) ・High Gain: G1dB=7.5dB(Typ.) ・High PAE: ηadd=32%(Typ.) ・Broad Band: 8.5~9.6GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM8596-15F is a power GaAs FET that is internally ma |
|
|
|
|
ETC |
SmartACFLModem such as monitoring of local extension status without going off-hook, are also supported. Incorporating Conexant’s proprietary Digital Isolation Barrier (DIB) design (patent pending) and other innovative DAA features, the SmartDAA architecture simpli |
|
|
|
|
ETC |
Ku-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM8596-8F |
|
|
|
|
ETC |
Ku-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM8596-12F |
|
|
|
|
ETC |
C-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM7785-18F |
|
|
|
|
ETC |
C-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM |
|
|
|
|
ETC |
C-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package C-Band Internally M |
|
|
|
|
ETC |
C-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package C-Band Internally M |
|
|
|
|
ETC |
C-Band Internally Matched FET ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.3~5.9GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM5359-45F is a power GaAs FET that is internally ma |
|
|
|
|
ETC |
C-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FL |
|
|
|
|
ETC |
C-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 44.5dBm (Typ.) High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FL |
|
|
|
|
ETC |
C-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FL |
|
|
|
|
ETC |
Ku-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1213-4 |
|
|
|
|
ETC |
X-Band Internally Matched FET ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that is internally m |
|