FLM0910-12F |
Part Number | FLM0910-12F |
Manufacturer | ETC |
Description | The FLM0910-12F is a power GaAs FET that is internally matched for standard communication and radar bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature... |
Features |
High Output Power: P1dB=40.5dBm(Typ.) High Gain: G1dB=7.0dB(Typ.) High PAE: ηadd=25%(Typ.) Broad Band: 9.5~10.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that is internally matched for standard communication and radar bands to provide optimum power and gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PTot Tstg Tch Rating 15 -5 57.6 -65 to +175 175 Unit V V W
oC oC
RECOMMENDED... |
Document |
FLM0910-12F Data Sheet
PDF 183.87KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FLM0910-12F |
SUMITOMO |
X-Band Internally Matched FET | |
2 | FLM0910-15F |
SUMITOMO |
X-Band Internally Matched FET | |
3 | FLM0910-25F |
SUMITOMO |
X-Band Internally Matched FET | |
4 | FLM0910-3F |
SUMITOMO |
X / Ku-Band Internally Matched FET | |
5 | FLM0910-4F |
SUMITOMO |
X / Ku-Band Internally Matched FET |