| No. | Partie # | Fabricant | Description | Fiche Technique |
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DP |
16-channel constant current output LED driver OUT SDO OUT 1 OUT 2 IDD VDD = 5.0V，R-EXT ，IOUT - VDS（MAX） OUT0 ~ OUT15 - IOUT VDD = 5.0V 1 IOH VDD = 5.0V I OL - VIH 0.7*VDD VIL GND IOH V OL V OH IOUT1 VDS =17V IOL = +1mA IOH = -1mA VDS =1.0V rext = 1800Ω 4.6 - DIOUT |
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Fairchild Semiconductor |
N-Channel UniFET MOSFET • RDS(on) = 48 mΩ(Typ.) @ VGS = 10 V, ID = 25.5 A • Low Gate Charge (Typ. 55 nC) • Low Crss (Typ. 63 pF) Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply March 2016 Description UniFETTM MOSFET is Fairchild Semicon |
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Analog Devices |
DC-to-DC Switching Regulator Wide input supply voltage range: 2.85 V to 15 V Generates well regulated, independently resistor programmable VPOS and VNEG outputs Boost regulator to generate VPOS output Adjustable positive output to 39 V Integrated 1.0 A main switch Optional sing |
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Fairchild Semiconductor |
N-Channel MOSFET • • • • • • 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transis |
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Analog Devices |
Integrated Power Solution Wide input voltage range: 4.5 V to 15.0 V ±1.5% output accuracy over full temperature range 250 kHz to 1.4 MHz adjustable switching frequency Adjustable/fixed output options via factory fuse or I2C interface I2C interface with interrupt on fault cond |
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Analog Devices |
Mobile I/O Expander And QWERTY Keypad Controller 18-GPIO port expander or 10 × 8 keypad matrix GPIOs configurable as GPIs, GPOs, and keypad rows or columns I2C interface with auto-increment 1.65 V to 3.6 V operation Keypad lock capability Open-drain interrupt output Key press and key release interr |
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Danfoss Silicon Power GmbH |
E2 IGBT 01623 PIM brake NTC DP10H600T 101622 DP15H600T 101621 DP20H600T 101620 DP30H600T 101619 DP50H600T * 1016xx DP10H1200T 101618 DP15H1200T 101617 DP25H1200T 101616 - * Types under development. Custom circuits and configurations on request. Outline Cir |
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Analog Devices |
Ultralow Power Step-Down Regulator Input supply voltage range: 2.15 V to 6.50 V Operates down to 2.00 V voltage Ultralow 180 nA quiescent current Selectable output voltage of 0.8 V to 5.0 V ±1.5% output accuracy over full temperature range in PWM mode Selectable hysteresis mode or PWM |
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MagnaChip |
N-Channel MOSFET VDS = 500V ID = 5.0A RDS(ON) ≤ 1.4Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Curr |
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Analog Devices |
DC-to-DC Inverting Regulator Wide input voltage range: 2.85 V to 15 V Adjustable negative output to VIN − 39 V Integrated 800 mA main switch 1.2 MHz/2.4 MHz switching frequency with optional external frequency synchronization from 1.0 MHz to 2.6 MHz Resistor programmable soft st |
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LG |
HD PDP MODULE ON Description Applications Electrical Interface of Plasma Display General Specifications Block Diagram 2. ELECTRICAL SPECIFICATIONS Absolute Power Specifications Input Power Specifications Power Supply Sequence LVDS Signal and LVDS Receiver Input Si |
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Analog Devices |
Ultralow Power Energy Harvester PMUs Boost regulator with maximum power point tracking (MPPT) with dynamic sensing or no sensing mode Hysteresis mode for best ultralight load efficiency Operating quiescent current of SYS pin (VIN > VCBP ≥ VMINOP): 510 nA Sleeping quiescent current of SY |
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Fairchild Semiconductor |
60V N-Channel MOSFET • 80 A, 60 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.011 Ω @ VGS = 6 V. • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient sup |
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Analog Devices |
DC-to-DC Inverting Regulator Wide input voltage range: 2.85 V to 15 V Adjustable negative output to VIN − 39 V Integrated 1.2 A main switch 1.2 MHz/2.4 MHz switching frequency with optional external frequency synchronization from 1.0 MHz to 2.6 MHz Resistor programmable soft sta |
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AUK corp |
Attenuator Diode • • • • • SMD package : SOD-323 Low capacitance : CT=0.25pF(Typ.) Low series resistance : rs=7Ω(Typ.) VHF tuner band RF attenuator application AGC for FM tuner Ordering Information Type No. SDP520D Marking 2M Package Code SOD-323 Outline Dimensions |
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AUK corp |
Attenuator Diode • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω(Typ.)@IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. SDP530D Marking W3 Package Code SOD-323 Outline Dimensions unit : mm 0.3~0.35 2.5±0.1 1.7 |
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AUK corp |
Attenuator Diode • Low capacitance : Max 0.5pF • Low series resistance : rs=3 Ω (Typ.)@IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. SDP530WAF Marking W3A Package Code SOT-23F Outline Dimensions 2.4±0.1 1.6±0.1 unit : mm |
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Analog Devices |
Linear LiFePO4 Battery Charger Linear LiFePO4 Battery Charger with Power Path and USB Compatibility in LFCSP ADP5063 GENERAL DESCRIPTION The ADP5063 charger is fully compliant with USB 3.0 and the USB Battery Charging 1.2 Compliance Plan Specification, and enables charging via th |
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MagnaChip |
N-Channel MOSFET VDS = 500V ID = 4.5A RDS(ON) ≤ 1.55Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast D G TO-220 MDP Series TO-220F MDF Series S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant December 2007 UniFETTM tm Description These N-Channel enhance |
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