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FDP5N50 |
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| Part Number | FDP5N50 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant December 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for h... |
| Document |
 FDP5N50 Data Sheet
PDF 232.56KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDP5N50F |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDP5N50NZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDP5N50U |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDP5N60NZ |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FDP51N25 |
Fairchild Semiconductor |
N-Channel UniFET MOSFET |
|