| No. | Partie # | Fabricant | Description | Fiche Technique |
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Cystech Electonics |
P-Channel Enhancement Mode MOSFET • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • Pb-free lead plating package -14V -5.6A 25.5mΩ(typ) 35.5mΩ(typ) 52.0mΩ(typ) Symbol MTA025P01SN3 |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Symbol MTA50N15J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTA50N15J3-0-T3-X Package |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=8.5A RDS(ON)@VGS=4.5V, ID=8.5A RDS(ON)@VGS=2.5V, ID=5A 30V |
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Cystech Electonics |
Common Drain Dual N-Channel Enhancement Mode MOSFET VGS=1.8V, ID=1A • Simple drive requirement • Low gate charge • Low on-resistance • Fast switching speed • ESD protected gate • Pb-free lead plating and halogen-free package 20V 9A 12.0 mΩ 16.2 mΩ 32.1 mΩ Equivalent Circuit MTA012A02CDV8 Outline |
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Cystech Electonics |
N-Channel MOSFET • Low on-resistance • ESD protected gate • High speed switching • Low-voltage drive • Easily designed drive circuits • Easy to use in parallel • Pb-free lead plating and halogen-free package BVDSS ID @VGS=4.5V, TA=25°C RDSON@VGS=4.5V, ID=0.5A RDSON@ |
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Cystech Electonics |
Dual P-Channel Enhancement Mode MOSFET • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package P-CH -14V -5.0A -7.1A 22.8mΩ 30.7mΩ 49.0mΩ Equivalent Circuit MTA025B01V8 Outline DFN3×3 G：Gate S：Source D：Drain Pin 1 Orderi |
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Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package Equivalent Circuit MTA025P01N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Volt |
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Cystech Electonics |
14V N-Channel Enhancement Mode MOSFET • Simple drive requirement • Small package outline • Pb-free lead plating and halogen-free package Symbol MTA010N01SN3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device Package Shipping MTA010N01SN3-0-T1-G SOT-23 (Pb |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package & Halogen-free package Symbol MTA06N03J3 Outline TO-252 G：Gat |
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Cystech Electonics |
-14V P-Channel MOSFET • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-4.5V, ID=-3.6A RDSON@VGS=-2 |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET BVDSS ID RDS(ON) 25V 80A 6mΩ • 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package & Halogen-free package Symbol M |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID @ VGS=-4.5V RDS(ON)@VGS= -4.5V, ID= -6A RDS(ON)@VGS= -2.5V, ID= -3A -20V -10A 78mΩ (typ) 120mΩ (typ) Symbol MTA |
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Cystech Electonics |
20V N-Channel Enhancement Mode MOSFET • Simple drive requirement • Small package outline • Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=4.5V, ID=650mA RDSON@VGS=2.5V,ID=500mA RDSON@VGS=1.8V,ID=200mA 20V 820mA 299mΩ(typ) 541mΩ(typ) 1.05Ω (typ) Symbol MTA340N02N3 Ou |
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Cystech Electonics |
20V N-Channel Enhancement Mode MOSFET • Simple drive requirement • Small package outline • Capable of 2.5V gate drive • Pb-free lead plating and halogen-free package BVDSS ID RDSON(MAX)@VGS=4.5V, ID=3.6A RDSON(MAX)@VGS=2.5V, ID=3.1A 20V 3.6A 29mΩ(typ.) 39mΩ(typ.) Symbol MTA55N02N3 Ou |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol MTA65N15H8 Outline DFN5×6 Pin 1 G：Gate D：Drain S：Source MTA6 |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package BVDSS ID RDSON(TYP) VGS=10V, ID=11A VGS=4.5V, ID=5A 200V 24A 74mΩ 74mΩ Equivalent Circuit MTA65N20J3 Outline TO-252(DPAK) G：Gate S：Source D：Drain G D S Ordering Info |
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Cystech Electonics |
P-Channel Enhancement Mode MOSFET • Low on-resistance • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package RDSON@VGS=-2.5V, ID=-3A RDSON@VGS=-1.8V, ID=-3A -20V -14.2A -5.2A 33.4mΩ(typ.) 46.4mΩ(typ.) 71.4mΩ(typ.) Equivalent Circuit MTA050P |
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Cystech Electonics |
Dual N-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free lead plating & Halogen-free package RDSON@VGS=4.5V, ID=5A 14V 7A 5.6A 15.4mΩ(typ) 21.7mΩ(typ) Equivalent Circuit MTA020A01Q8 Outline SOP-8 |
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Cystech Electonics |
14V N-Channel Enhancement Mode MOSFET • Simple drive requirement • Small package outline • Pb-free lead plating and halogen-free package Symbol MTA020N01S3 Outline SOT-323 D G：Gate S：Source D：Drain S G Ordering Information Device MTA020N01S3-0-T1-G Package Shipping SOT-323 (Pb- |
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Cystech Electonics |
-20V P-Channel Enhancement Mode MOSFET • For load switch application only • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • ESD protected gate • Pb-free lead plating package -20V -4.3A 37.5mΩ(typ) 52.4mΩ |
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