| No. | Partie # | Fabricant | Description | Fiche Technique |
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Cypress Semiconductor |
Simultaneous Read/Write Flash Supports Common Flash Memory Interface (CFI) Erase suspend/erase resume – Suspends erase operations to read data from, or program data to, a sector that is not being erased, then resumes the erase operation Data# polling and toggle bits – Provi |
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Cypress Semiconductor |
Boot Sector Flash ❐ A hardware method of locking a sector to prevent any program or erase operations within that sector ❐ Sectors can be locked in-system or via programming equipment ❐ Temporary Sector Unprotect feature allows code changes in previously locked sectors |
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Cypress Semiconductor |
3V Page Mode MirrorBit Flash ■ Software features ❐ Advanced Sector Protection: offers Persistent Sector Protection and Password Sector Protection ❐ Program Suspend & Resume: read other sectors before programming operation is completed ❐ Erase Suspend & Resume: read/program other |
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Cypress Semiconductor |
MirrorBit Eclipse Flash Memory a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that |
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Cypress Semiconductor |
3.0V single power flash memory |
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Cypress Semiconductor |
Boot Sector Flash – A hardware method of locking a sector to prevent any program or erase operations within that sector – Sectors can be locked in-system or via programming equipment – Temporary Sector Group Unprotect feature allows code changes in pr |
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Cypress Semiconductor |
3.0V GL-S Flash Memory a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that |
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Cypress Semiconductor |
3.0V GL-S Flash Memory a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that |
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Cypress Semiconductor |
3.0V GL-S Flash Memory a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that |
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Cypress Semiconductor |
64 Mbit (8 Mbyte) 3.0 V Flash Memory |
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Cypress Semiconductor |
64 Mbit (4M x 16-bit) Flash – Device generates data output voltages and tolerates data input voltages as determined by the voltage on the VCCQ pin – 1.8 V compatible I/O signals Address and Data Interface Options – Address and Data Multiplexed for reduced I/O count (ADM) S29V |
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Cypress Semiconductor |
3.0V single power flash memory |
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Cypress Semiconductor |
3V Page Mode MirrorBit Flash ■ Software features ❐ Advanced Sector Protection: offers Persistent Sector Protection and Password Sector Protection ❐ Program Suspend & Resume: read other sectors before programming operation is completed ❐ Erase Suspend & Resume: read/program other |
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Cypress Semiconductor |
Page Flash a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that re |
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Cypress Semiconductor |
Boot Sector Flash – A hardware method of locking a sector to prevent any program or erase operations within that sector – Sectors can be locked in-system or via programming equipment – Tempora |
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Cypress Semiconductor |
3.0V GL-S Flash Memory a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that |
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Cypress Semiconductor |
64 Mbit (4M x 16-bit) Flash – Device generates data output voltages and tolerates data input voltages as determined by the voltage on the VCCQ pin – 1.8 V compatible I/O signals Address and Data Interface Options – Address and Data Multiplexed for reduced I/O count (ADM) S29V |
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Cypress Semiconductor |
Simultaneous Read/Write Flash Single 1.8 V read/program/erase (1.70 –1.95 V) 90 nm MirrorBit™ Technology Simultaneous Read/Write operation with zero latency Random page read access mode of 8 words with 20 ns intra page access time 32 Word / 64 Byte Write Buffer Sixteen |
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Cypress Semiconductor |
3.0V single power flash memory |
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Cypress Semiconductor |
Page Mode and Simultaneous Read/Write Flash memory device ■ Software command-set compatible with JEDEC 42.4 standard – Backward compatible with Am29F, Am29LV, Am29DL, and AM29PDL families and MBM29QM/RM, MBM29LV, MBM29DL, MBM29PDL families ■ CFI (Common Flash Interface) compliant ❐ Provides device-specific |
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