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S29WS256P |
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| Part Number | S29WS256P |
| Manufacturer | Cypress Semiconductor |
| Description | S29WS512P S29WS256P S29WS128P 512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V, Simultaneous Read/Write Flash Features Single 1.8 V read/program/erase (1.70–1.95 V) 90 nm MirrorBit™ Technology Simult... |
| Features |
Single 1.8 V read/program/erase (1.70 –1.95 V) 90 nm MirrorBit™ Technology Simultaneous Read/Write operation with zero latency Random page read access mode of 8 words with 20 ns intra page access time 32 Word / 64 Byte Write Buffer Sixteen-bank architecture consisting of 32/16/8 Mwords for 512/256/128P, respectively Four 16 Kword sectors at both top and bottom of memory array 510/254/126 64Kword sectors (WS512/256/128P) Programmable linear (8/16/32) with or without wrap around and continuous burst read modes Secured Silicon Sector region consisting of 128 words each for fact... |
| Document |
 S29WS256P Data Sheet
PDF 871.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | S29WS256N |
SPANSION |
SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
|
| 2 | S29WS256N |
SPANSION |
Burst Mode Flash Memory |
|
| 3 | S29WS256P |
SPANSION |
Burst Simultaneous Read/Write MirrorBit Flash Memory |
|
| 4 | S29WS-N |
SPANSION |
SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
|
| 5 | S29WS-P |
SPANSION |
Burst Simultaneous Read/Write MirrorBit Flash Memory |
|