logo

Comset Semiconductor 2N2 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
2N2907

Comset Semiconductor
General Purpose Amplifier Transistors
K/W K/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP 2N2907
  – 2N2907A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO ICEX VCEO VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff
Datasheet
2
2N2222A

Comset Semiconductor
Switching Silicon Transistors
useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2221 2N2222 30 60 5 2N2221A 2N2222A 40 75 6 800 Un
Datasheet
3
2N2906A

Comset Semiconductor
General Purpose Amplifier Transistors
NP 2N2906
  – 2N2906A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO IEBO VCEO VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current (*) Collector Emitter Breakdown Voltage Collector Ba
Datasheet
4
2N2325

Comset Semiconductors
(2N2322 - 2N2326) SILICON THYRISTORS
.net/ 2n2322 to 2n2326 ELECTRICAL CHARACTERISTICS (*) TJ=25°C unless otherwise noted, RGK=1000Ω Symbol VDRM IRRM Ratings Peak Forward Blocking Min : Voltage (1) Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Peak Forward Blocking Current (R
Datasheet
5
2N2102

Comset Semiconductor
Silicon Planar Epitaxial NPN transistor
VCEO Ratings Collector Cutoff Current Emitter Cutoff Current Collector Base Sustaining Voltage Collector Emitter Sustaining Voltage (*) Test Condition(s) VCB= 60 V IE= 0 VEB= 5 V, IC= 0 IC= 100 µA, IE= 0 IC= 30 mA, IB= 0 IC= 10 µA, VCE= 10 V IC= 0.
Datasheet
6
2N2219

Comset Semiconductor
Switching Silicon Transistors
useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2218 2N2219 30 60 5 800 2N2218 A 2N2219 A 40 75 6
Datasheet
7
2N2219A

Comset Semiconductor
Switching Silicon Transistors
useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2218 2N2219 30 60 5 800 2N2218 A 2N2219 A 40 75 6
Datasheet
8
2N2221

Comset Semiconductor
Switching Silicon Transistors
useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2221 2N2222 30 60 5 2N2221A 2N2222A 40 75 6 800 Un
Datasheet
9
2N2221A

Comset Semiconductor
Switching Silicon Transistors
useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2221 2N2222 30 60 5 2N2221A 2N2222A 40 75 6 800 Un
Datasheet
10
2N2222

Comset Semiconductor
Switching Silicon Transistors
useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2221 2N2222 30 60 5 2N2221A 2N2222A 40 75 6 800 Un
Datasheet
11
2N2906

Comset Semiconductor
General Purpose Amplifier Transistors
NP 2N2906
  – 2N2906A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO IEBO VCEO VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current (*) Collector Emitter Breakdown Voltage Collector Ba
Datasheet
12
2N2907A

Comset Semiconductor
General Purpose Amplifier Transistors
K/W K/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP 2N2907
  – 2N2907A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO ICEX VCEO VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff
Datasheet
13
2N2218

Comset Semiconductor
Switching Silicon Transistors
useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2218 2N2219 30 60 5 800 2N2218 A 2N2219 A 40 75 6
Datasheet
14
2N2218A

Comset Semiconductor
Switching Silicon Transistors
useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2218 2N2219 30 60 5 800 2N2218 A 2N2219 A 40 75 6
Datasheet
15
2N2484

Comset Semiconductor
SILICON PLANAR EPITAXIAL TRANSISTORS
urrent Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB=45 V, IE=0 VCB=45 V, IE=0 Tj=150°C VBE=5.0 V, IC=0 IC=10 mA, IB=0 IC=10
Datasheet
16
2N2894

Comset Semiconductor
NPN Transistor
Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB =-6 V, IE =0V, Tj =125°C VBE =0 V, VCE =-6 V IC =-10 mA, IB =0 VBE =0 V, IC =-10 µA IC =-1
Datasheet
17
2N2322

Comset Semiconductors
(2N2322 - 2N2326) SILICON THYRISTORS
.net/ 2n2322 to 2n2326 ELECTRICAL CHARACTERISTICS (*) TJ=25°C unless otherwise noted, RGK=1000Ω Symbol VDRM IRRM Ratings Peak Forward Blocking Min : Voltage (1) Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Peak Forward Blocking Current (R
Datasheet
18
2N2323

Comset Semiconductors
(2N2322 - 2N2326) SILICON THYRISTORS
.net/ 2n2322 to 2n2326 ELECTRICAL CHARACTERISTICS (*) TJ=25°C unless otherwise noted, RGK=1000Ω Symbol VDRM IRRM Ratings Peak Forward Blocking Min : Voltage (1) Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Peak Forward Blocking Current (R
Datasheet
19
2N2324

Comset Semiconductors
(2N2322 - 2N2326) SILICON THYRISTORS
.net/ 2n2322 to 2n2326 ELECTRICAL CHARACTERISTICS (*) TJ=25°C unless otherwise noted, RGK=1000Ω Symbol VDRM IRRM Ratings Peak Forward Blocking Min : Voltage (1) Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Peak Forward Blocking Current (R
Datasheet
20
2N2327

Comset Semiconductors
(2N2327 - 2N2329) SILICON THYRISTORS
329 ELECTRICAL CHARACTERISTICS (*) TJ=25°C unless otherwise noted, RGK=1000Ω Symbol VDRM IRRM IDRM Ratings Peak Forward Blocking Voltage Min : (1) Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Peak Forward Blocking Current (Rated VDRM, TJ =
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact