No. | Partie # | Fabricant | Description | Fiche Technique |
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Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor Type CEPF630 CEBF630 CEFF630 VDSS 200V 200V 200V RDS(ON) 0.35Ω 0.35Ω 0.35Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D |
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Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 65A,RDS(ON) = 8mΩ @VGS = 10V. RDS(ON) = 12mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PA |
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Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |
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Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V , 40A , RDS(ON)=17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 |
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Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |
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Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |
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Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor 120V, 15A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO |
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Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |
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Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |
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Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V , 60A , RDS(ON)=10m Ω @VGS=10V. RDS(ON)=15m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 |
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Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V , 60A , RDS(ON)=12m Ω @VGS=10V. RDS(ON)=17mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES |
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Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V , 25A , RDS(ON)=22m Ω @VGS=10V. RDS(ON)=40mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 S |
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Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor 60V, 52.4A,RDS(ON) = 21mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PA |
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Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |
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Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor 60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-2 |
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Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PA |
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Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |
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Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor 60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-2 |
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Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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