Central Semiconductor Corp 2N6 fiche technique

No.	Partie #	Fabricant	Description
1	2N6250	Central Semiconductor Corp	NPN SILICON TRANSISTOR
2	2N6249	Central Semiconductor Corp	NPN SILICON TRANSISTOR
3	2N6474	Central Semiconductor Corp	SILICON SWITCHING TRANSISTORS =Rated VCER, RBE=100Ω - 100 ICER VCE=Rated VCER, RBE=100Ω, TC=100°C - 2.0 ICEO VCE=1/2 Rated VCEO - 1.0 IEBO VEB=5.0V - 1.0 BVCEO IC=100mA 100 - BVCER IC=100mA, RBE=100Ω 110 - VCE(SAT) IC=1.5A, IB=0.15A - 1.2 VCE(SAT) IC=4.0A, IB=2.0
4	2N6576	Central Semiconductor Corp	NPN SILICON POWER DARLINGTON TRANSISTOR ICEO VCE=Rated VCEO IEBO VEB=7.0V BVCEO IC=200mA (2N6576) 60 BVCEO IC=200mA (2N6577) 90 BVCEO IC=200mA (2N6578) 120 VCE(SAT) IC=10A, IB=100mA VCE(SAT) IC=15A, IB=150mA VBE(SAT) IC=10A, IB=100mA VBE(SAT) IC=15A, IB=150mA hFE VCE=3.0
5	2N6557	Central Semiconductor Corporation	(2N6558 - 2N6559) NPN Silicon Transistor
6	2N6029	Central Semiconductor Corp	COMPLEMENTARY SILICON POWER TRANSISTORS
7	2N6030	Central Semiconductor Corp	COMPLEMENTARY SILICON POWER TRANSISTORS
8	2N6295	Central Semiconductor Corp	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS CEO IC=50mA, (2N6294, 2N6296) 60 BVCEO IC=50mA, (2N6295, 2N6297) 80 VCE(SAT) IC=2.0A, IB=8.0mA VCE(SAT) IC=4.0A, IB=40mA VBE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=2.0A hFE VCE=3.0V, IC=2.0A 750 hFE VCE=3.0V, IC=4.0A 100 hfe VCE=3.
9	2N6306	Central Semiconductor Corp	NPN SILICON TRANSISTOR
10	2N6307	Central Semiconductor Corp	NPN SILICON TRANSISTOR
11	2N6372	Central Semiconductor Corp	COMPLEMENTARY SILICON POWER TRANSISTORS
12	2N6373	Central Semiconductor Corp	COMPLEMENTARY SILICON POWER TRANSISTORS
13	2N6374	Central Semiconductor Corp	COMPLEMENTARY SILICON POWER TRANSISTORS
14	2N6553	Central Semiconductor Corp	Complementary Silicon Transistors BO VEB=4.0V BVCBO lC=100μA BVCEO lC=1.0mA BVEBO lE=100μA VCE(SAT) lC=250mA, IB=10mA VCE(SAT) lC=1.0A, IB=100mA VBE(ON) VCE=5.0V, IC=250mA hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=50mA hFE VCE=1.0V, IC=250mA hFE VCE=1.0V, IC=500mA
15	2N6577	Central Semiconductor Corp	NPN SILICON POWER DARLINGTON TRANSISTOR ICEO VCE=Rated VCEO IEBO VEB=7.0V BVCEO IC=200mA (2N6576) 60 BVCEO IC=200mA (2N6577) 90 BVCEO IC=200mA (2N6578) 120 VCE(SAT) IC=10A, IB=100mA VCE(SAT) IC=15A, IB=150mA VBE(SAT) IC=10A, IB=100mA VBE(SAT) IC=15A, IB=150mA hFE VCE=3.0
16	2N6674	Central Semiconductor Corp	NPN SILICON POWER TRANSISTOR
17	2N6251	Central Semiconductor Corp	NPN SILICON TRANSISTOR
18	2N6294	Central Semiconductor Corp	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS CEO IC=50mA, (2N6294, 2N6296) 60 BVCEO IC=50mA, (2N6295, 2N6297) 80 VCE(SAT) IC=2.0A, IB=8.0mA VCE(SAT) IC=4.0A, IB=40mA VBE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=2.0A hFE VCE=3.0V, IC=2.0A 750 hFE VCE=3.0V, IC=4.0A 100 hfe VCE=3.
19	2N6296	Central Semiconductor Corp	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS CEO IC=50mA, (2N6294, 2N6296) 60 BVCEO IC=50mA, (2N6295, 2N6297) 80 VCE(SAT) IC=2.0A, IB=8.0mA VCE(SAT) IC=4.0A, IB=40mA VBE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=2.0A hFE VCE=3.0V, IC=2.0A 750 hFE VCE=3.0V, IC=4.0A 100 hfe VCE=3.
20	2N6297	Central Semiconductor Corp	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS CEO IC=50mA, (2N6294, 2N6296) 60 BVCEO IC=50mA, (2N6295, 2N6297) 80 VCE(SAT) IC=2.0A, IB=8.0mA VCE(SAT) IC=4.0A, IB=40mA VBE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=2.0A hFE VCE=3.0V, IC=2.0A 750 hFE VCE=3.0V, IC=4.0A 100 hfe VCE=3.