Features
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ICEO
VCE=Rated VCEO
IEBO
VEB=7.0V
BVCEO
IC=200mA (2N6576)
60
BVCEO
IC=200mA (2N6577)
90
BVCEO
IC=200mA (2N6578)
120
VCE(SAT) IC=10A, IB=100mA
VCE(SAT) IC=15A, IB=150mA
VBE(SAT) IC=10A, IB=100mA
VBE(SAT) IC=15A, IB=150mA
hFE VCE=3.0V, IC=400mA
200
hFE VCE=3.0V, IC=4.0A
2.0K
hFE VCE=3.0V, IC=10A
500
hFE VCE=4.0V, IC=15A
100
MAX 500 5.0 5.0 1.0 7.5
2.8 4.0 3.5 4.5
20K 5.0K
UNITS μA mA mA mA mA V V V V V V V
R1 (4-April 2014)
2N6576 2N6577 2N6578
SILICON NPN DARLINGTON POWER TRANSISTORS
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIO...
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