| No. | Partie # | Fabricant | Description | Fiche Technique |
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Central Semiconductor Corp |
COMPLEMENTARY SILICON |
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Central Semiconductor Corp |
SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS 0V 100 µA BVCEO IC=1.0mA 300 V VCE(SAT) IC=100mA, IB=10mA (CJD340) 1.0 V VCE(SAT) IC=100mA, IB=10mA (CJD350) 2.6 V VBE(ON) VCE=10V, IC=1.0A (CJD340) 1.5 V VBE(ON) VCE=10V, IC=1.0A (CJD350) 2.0 V hFE VCE=10V, IC=50mA 3 |
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Central Semiconductor |
SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS 0V 100 µA BVCEO IC=1.0mA 300 V VCE(SAT) IC=100mA, IB=10mA (CJD340) 1.0 V VCE(SAT) IC=100mA, IB=10mA (CJD350) 2.6 V VBE(ON) VCE=10V, IC=1.0A (CJD340) 1.5 V VBE(ON) VCE=10V, IC=1.0A (CJD350) 2.0 V hFE VCE=10V, IC=50mA 3 |
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Central Semiconductor Corp |
PNP Transistor hFE fT Cob Cob VCE=50V VCE=80V, VBE(off)=1.5V VCE=80V, VBE(off)=1.5V, TC=125°C VCB=80V VCB=100V VEB=5.0V IC=30mA IC=2.0A, IB=8.0mA IC=4.0A, IB=40mA IC=4.0A, IB=40mA VCE=3.0V, IC=2.0A VCE=3.0V, IC=0.5A VCE=3.0V, IC=2.0A VCE=3.0V, IC=4.0A VCE=10V, IC |
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Central Semiconductor Corp |
NPN SILICON POWER TRANSISTOR |
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Central Semiconductor Corp |
COMPLEMENTARY SILICON POWER TRANSISTOR |
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Central Semiconductor Corp |
NPN SILICON POWER TRANSISTOR 0V (CJD47) ICES VCE=500V (CJD50) IEBO VEB=5.0V BVCEO IC=30mA (CJD47) 250 BVCEO IC=30mA (CJD50) 400 VCE(SAT) IC=1.0A, IB=200mA VBE(ON) VCE=10V, IC=1.0A hFE VCE=10V, IC=300mA 30 hFE VCE=10V, IC=1.0A 10 fT VCE=10V, IC=200mA, f=2.0MHz |
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Central Semiconductor |
PNP POWER TRANSISTORS NDITIONS MIN MAX ICEO VCE=60V 50 UNITS µA ICES VCE=100V 20 µA IEBO VEB=5.0V 1.0 mA BVCEO IC=30mA 100 V VCE(SAT) IC=3.0A, IB=375mA 1.2 V VBE(ON) VCE=4.0V, IC=3.0A 1.8 V hFE VCE=4.0V, IC=1.0A 25 hFE VCE=4.0V, I |
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Central Semiconductor |
NPN POWER TRANSISTORS NDITIONS MIN MAX ICEO VCE=60V 50 UNITS µA ICES VCE=100V 20 µA IEBO VEB=5.0V 1.0 mA BVCEO IC=30mA 100 V VCE(SAT) IC=3.0A, IB=375mA 1.2 V VBE(ON) VCE=4.0V, IC=3.0A 1.8 V hFE VCE=4.0V, IC=1.0A 25 hFE VCE=4.0V, I |
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Central Semiconductor |
NPN POWER TRANSISTOR 25°C 100 µA IEBO VEB=8.0V 100 nA BVCEO IC=10mA 25 V VCE(SAT) IC=500mA, IB=50mA 0.3 V VCE(SAT) IC=2.0A, IB=200mA 0.75 V VCE(SAT) IC=5.0A, IB=1.0A 1.8 V VBE(SAT) IC=5.0A, IB=1.0A 2.5 V VBE(ON) VCE=1.0V, IC=2.0A |
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Central Semiconductor |
PNP POWER TRANSISTOR 25°C 100 µA IEBO VEB=8.0V 100 nA BVCEO IC=10mA 25 V VCE(SAT) IC=500mA, IB=50mA 0.3 V VCE(SAT) IC=2.0A, IB=200mA 0.75 V VCE(SAT) IC=5.0A, IB=1.0A 1.8 V VBE(SAT) IC=5.0A, IB=1.0A 2.5 V VBE(ON) VCE=1.0V, IC=2.0A |
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Central Semiconductor Corp |
NPN Transistor hFE fT Cob Cob VCE=50V VCE=80V, VBE(off)=1.5V VCE=80V, VBE(off)=1.5V, TC=125°C VCB=80V VCB=100V VEB=5.0V IC=30mA IC=2.0A, IB=8.0mA IC=4.0A, IB=40mA IC=4.0A, IB=40mA VCE=3.0V, IC=2.0A VCE=3.0V, IC=0.5A VCE=3.0V, IC=2.0A VCE=3.0V, IC=4.0A VCE=10V, IC |
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Central Semiconductor Corp |
COMPLEMENTARY SILICON POWER TRANSISTOR |
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Central Semiconductor Corp |
COMPLEMENTARY SILICON |
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Central Semiconductor Corp |
NPN SILICON POWER TRANSISTOR 0V (CJD47) ICES VCE=500V (CJD50) IEBO VEB=5.0V BVCEO IC=30mA (CJD47) 250 BVCEO IC=30mA (CJD50) 400 VCE(SAT) IC=1.0A, IB=200mA VBE(ON) VCE=10V, IC=1.0A hFE VCE=10V, IC=300mA 30 hFE VCE=10V, IC=1.0A 10 fT VCE=10V, IC=200mA, f=2.0MHz |
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Central Semiconductor |
POWER DARLINGTON TRANSISTORS C=125°C ICBO VCB=100V IEBO VEB=5.0V BVCEO IC=30mA 100 VCE(SAT) IC=4.0A, IB=16mA VCE(SAT) IC=8.0A, IB=80mA VBE(SAT) IC=8.0A, IB=80mA VBE(ON) VCE=4.0V, IC=4.0A hFE VCE=4.0V, IC=4.0A 1000 hFE VCE=4.0V, IC=8.0A 100 fT VCE=4.0V, IC=3.0A, |
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Central Semiconductor |
POWER DARLINGTON TRANSISTORS C=125°C ICBO VCB=100V IEBO VEB=5.0V BVCEO IC=30mA 100 VCE(SAT) IC=4.0A, IB=16mA VCE(SAT) IC=8.0A, IB=80mA VBE(SAT) IC=8.0A, IB=80mA VBE(ON) VCE=4.0V, IC=4.0A hFE VCE=4.0V, IC=4.0A 1000 hFE VCE=4.0V, IC=8.0A 100 fT VCE=4.0V, IC=3.0A, |
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