Features
|
25°C 100
µA
IEBO
VEB=8.0V 100
nA
BVCEO
IC=10mA
25 V
VCE(SAT) IC=500mA, IB=50mA
0.3
V
VCE(SAT) IC=2.0A, IB=200mA
0.75
V
VCE(SAT) IC=5.0A, IB=1.0A
1.8
V
VBE(SAT) IC=5.0A, IB=1.0A
2.5
V
VBE(ON)
VCE=1.0V, IC=2.0A
1.6
V
hFE
VCE=1.0V, IC=500mA
70
hFE
VCE=1.0V, IC=2.0A
45
180
hFE
VCE=2.0V, IC=5.0A
10
fT
VCE=10V, IC=100mA, f=10MHz
65
MHz
Cob
VCB=10V, IE=0, f=0.1MHz (CJD200)
80
pF
Cob
VCB=10V, IE=0, f=0.1MHz (CJD210)
120
pF
R4 (22-August 2023)
CJD200 NPN CJD210 PNP
SURFACE MOUNT SILICON COMPLEMENTARY
POWER TRANSISTORS
DPAK C...
|