No. | Partie # | Fabricant | Description | Fiche Technique |
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Central Semiconductor Corp |
Small Signal Transistors 0 0.5 50 50 4,000 150 2,000 2,000 2,000 150 150 30 30 10 10 5.0 5.0 5.0 5.0 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 2.0 10 10 10 1.0 1.0 1.0 5.0 5.0 10 10 2.0 10 2.0 2.0 2.0 10 10 10 10 10 10 MAX 0.50 0.50 0.50 0.50 0.65 1.40 0.75 0.95 0.60 0. |
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Central Semiconductor |
N-Channel MOSFET |
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Central Semiconductor |
Silicon power Transistor |
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Central Semiconductor |
SILICON N-CHANNEL JFETS MIN MAX - 100 - 100 5.0 15 35 2.5 6.0 4,500 7,500 - 50 - 1.0 - 4.0 - 2.0 UNITS V V V mA mW °C UNITS pA nA mA V V μS μS pF pF pF HIGH FREQUENCY CHARACTERISTICS: SYMBOL TEST CONDITIONS giss biss goss boss gfs Gps NF VDS=15V, VGS=0 VDS=15V, VGS=0 VD |
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Central Semiconductor |
PNP SILICON TRANSISTOR |
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Central Semiconductor |
N-Channel JFET F) VDS=20V, ID=1.0nA 4.0 10 2.0 5.0 VGS(f) VDS=0, IG=1.0mA - 1.0 - 1.0 VDS(ON) ID=12mA - 0.4 - - VDS(ON) ID=6.0mA - - - 0.4 VDS(ON) ID=3.0mA - - - - rDS(ON) ID=1.0mA, VGS=0 - 30 - 60 rds(on) VGS=0, ID=0, f=1.0kHz - 30 |
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Central Semiconductor |
N-CHANNEL SILICON JFET VDS=0, f=1.0MHz (2N4857A) td VDD=10V, VGS(OFF)=6.0V, ID=10mA tr VDD=10V, VGS(OFF)=6.0V, ID=10mA toff VDD=10V, VGS(OFF)=6.0V, ID=10mA (2N4857) toff VDD=10V, VGS(OFF)=6.0V, ID=10mA (2N4857A) MAX 0.25 0.5 100 0.25 0.5 6.0 0.5 40 8.0 3.5 18 10 6.0 |
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Central Semiconductor |
SILICON NPN TRANSISTORS MHz Cob VCB=5.0V, IE=0, f=100kHz Cib VBE=0.5V, IC=0, f=100kHz ton VCC=30V, VEB(OFF)=2.0V, IC=150mA, IB1=15mA toff VCC=30V, IC=150mA, IB1=IB2=15mA 2N4400 MIN MAX - 100 60 40 6.0 - 0.40 - 0.75 0.75 0.95 - 1.2 -20 40 50 150 20 20 250 200 - 6.5 - 3 |
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Central Semiconductor |
Silicon power Transistor |
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Central Semiconductor Corp |
Small Signal Transistors 0 0.5 50 50 4,000 150 2,000 2,000 2,000 150 150 30 30 10 10 5.0 5.0 5.0 5.0 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 2.0 10 10 10 1.0 1.0 1.0 5.0 5.0 10 10 2.0 10 2.0 2.0 2.0 10 10 10 10 10 10 MAX 0.50 0.50 0.50 0.50 0.65 1.40 0.75 0.95 0.60 0. |
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Central Semiconductor Corp |
SILICON PNP TRANSISTORS ICEX VCE=40V, VBE=1.5V, TC=150°C (2N4235) ICEX VCE=60V, VBE=1.5V, TC=150°C (2N4236) ICEO VCE=30V (2N4234) ICEO VCE=40V (2N4235) ICEO VCE=60V (2N4236) IEBO VEB=7.0V BVCEO IC=100mA (2N4234) 40 BVCEO IC=100mA (2N4235) 60 BVCEO IC=10 |
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Central Semiconductor |
N-Channel JFET F) VDS=20V, ID=1.0nA 4.0 10 2.0 5.0 VGS(f) VDS=0, IG=1.0mA - 1.0 - 1.0 VDS(ON) ID=12mA - 0.4 - - VDS(ON) ID=6.0mA - - - 0.4 VDS(ON) ID=3.0mA - - - - rDS(ON) ID=1.0mA, VGS=0 - 30 - 60 rds(on) VGS=0, ID=0, f=1.0kHz - 30 |
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Central Semiconductor |
PNP TRANSISTOR mA, f=1.0kHz 4.0 hoe VCE=6.0V, IC=1.0mA, f=1.0kHz 50 hre VCE=6.0V, IC=1.0mA, f=1.0kHz 7.0 Cob VCB=6.0V, IE=0, f=1.0MHz fhfb VCB=6.0V, IE=1.0mA 4.0 MAX 5.0 90 2.5 0.15 0.20 0.35 0.40 20 UNITS V V V mA mA mW °C °C UNITS μA μA μA V V V V V V k |
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Central Semiconductor |
(2N4851 - 2N4853) PN SILICON UNIJUNCTION TRANSISTOR 0V (2N4852) V1=20V (2N4853) 3.0 5.0 6.0 2.0 4.0 6.0 0.70 4.7 www.DataSheet.co.kr MAX 0.75 0.85 9.1 100 50 UNITS kΩ nA nA mA mA mA 2.0 0.4 μA μA V V V R2 (13-December 2010) Datasheet pdf - http://www.DataSheet4U.net/ 2N4851 2N4852 2N4853 PN SI |
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Central Semiconductor |
SILICON TRANSISTORS |
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Central Semiconductor |
SILICON TRANSISTORS E=50V (2N4232A, 2N6313) ICEO VCE=70V (2N4233A, 2N6314) ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C IEBO VEB=5.0V BVCEO IC=100mA, (2N4231A, 2N6312) 40 BVCEO IC=100mA, (2N4232A, 2N6313) 60 BVCEO IC=100mA, (2N4233A |
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Central Semiconductor |
N-CHANNEL SILICON JFET |
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Central Semiconductor |
N-CHANNEL SILICON JFET |
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Central Semiconductor |
Silicon power Transistor |
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Central Semiconductor |
PNP Transistor C=0.1mA 30 hFE VCE=5.0V, IC=100mA 40 hFE VCE=5.0V, IC=100mA, TA= –55°C 15 hFE VCE=5.0V, IC=500mA 25 hFE VCE=5.0V, IC=1.0A 10 MAX 50 50 10 0.15 0.5 0.9 1.1 120 UNITS V V V A W W °C °C/W °C/W UNITS nA µA µA V V V V V V V R0 (10-January 2 |
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