Features
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C=0.1mA
30
hFE
VCE=5.0V, IC=100mA
40
hFE
VCE=5.0V, IC=100mA, TA= –55°C
15
hFE
VCE=5.0V, IC=500mA
25
hFE
VCE=5.0V, IC=1.0A
10
MAX 50 50 10
0.15 0.5 0.9 1.1
120
UNITS V V V A W W °C
°C/W °C/W
UNITS nA µA µA V V V V V V V
R0 (10-January 2020)
2N4031 PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
hfe
VCE=10V, IC=50mA, f=100MHz
1.0
4.0
Cob
VCB=10V, IE=0, f=1.0MHz
20
Cib
VEB=0.5V, IC=0, f=1.0MHz
110
ton
VCC=30V, IC=500mA, IB1=50mA
100
ts
VCC=30V, IC=500mA, IB1=IB2=50mA
350
tf
VCC=30V...
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