| No. | Partie # | Fabricant | Description | Fiche Technique |
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California Eastern Labs |
SILICON POWER MOS FET • High output power • High linear gain • Surface mount package • Single supply : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) : 5.7 5.7 |
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