| No. | Partie # | Fabricant | Description | Fiche Technique |
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Seme LAB |
SILICON EPITAXIAL PLANAR DIODE +175 °C +150°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00 1N4148CSM CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VF IR V(BR)R C |
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Seme LAB |
GENERAL PURPOSE NPN TRANSISTOR 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS A 1.40 (0.055) max. 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.07 |
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CSMSC |
Dual 2.2W Audio Amplifier Plus Stereo Headphone Function an externally controlled, low-power consumption shutdown mode, a stereo headphone amplifier mode, and thermal shutdown protection. It also utilizes circuitry to reduce “clicks and pops” during device turn-on. Note 1: An HWD2163IUP or HWD2163IVG that |
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Seme LAB |
SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS mb = 25°C Tamb = 25°C Tamb = 25°C Tamb = 25°C f = 1MHZ Tamb = 25°C IF = 5mA VR = 50V IF = 1mA IF = 15mA IR = 10mA VR = 0V Min. Typ. Max. 0.2 0.41 1 Unit m A V V 70 2 100 PF ps * Pulse test £ 300ms , d £ 2% Semelab plc. Telephone +44(0)1455 |
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CSMSC |
350mW Audio Power Amplifier of external components. Since the HWD2119 does not require output coupling capacitors, bootstrap capacitors or snubber networks, it is optimally suited for low-power portable applications. n LLP, SOP, and MSOP surface mount packaging. n Switch on/o |
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CSMSC |
250mW Audio Power Amplifier an externally controlled, low power j Shutdown Current consumption shutdown mode which is virtually clickless and 0.7µA (typ) popless, as well as an internal thermal shutdown protection mechanism. Features The unity-gain stable HWD2182 can be con |
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International Rectifier |
Soft Recovery Diode • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode VR = 400V VF(typ.) = 1V IF(AV) = 80A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.) = 190A/µs D |
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Seme LAB |
PNP SILICON TRANSISTOR • High Voltage Switching • Low Power Amplifier Applications A 1.40 (0.055) max. 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.31 rad. (0.012) • Hermetic Ceramic Surface Mount Package A = 1.02 ± 0.10 (0.04 ± 0.004) LCC1 Underside View |
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Seme LAB |
SMALL SIGNAL N-CHANNEL JFET 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± |
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CSMSC |
Dual 250 mW Audio Power Amplifier an externally controlled, low-power consumption shutdown mode, as well as an internal thermal shutdown protection mechanism. The unity-gain stable HWD2180 can be configured by external gain-setting resistors. Key Specifications n THD+N at 1kHz at 200 |
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icsmar |
High two-phase hybrid subdivision Chip Stepper Motor Driver nt VDD supply current VM supply current Vref input circuit Input current Divider ratio Input current VIN (H) VIN (L) VH IIN (H) IIN (L) IDD1 IDD2 IDD3 IM1 IM2 IIN(ref) Vref/VNF IIN(FDT) M1, M2, M3, CW/CCW, CLK, RESET, ENABLE M1, M2, M3, CW/CCW, |
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CSMSC |
1 Watt Audio Power Amplifier rovide high quality output power with a minimal amount of external components. The HWD2190 does not require output n Available in space-saving packages: micro SMD, MSOP, coupling capacitors or bootstrap capacitors, and therefore is SOIC, and LLP |
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Seme LAB |
PNP SWITCHING TRANSISTOR 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS A 1.40 (0.055) max. 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.07 |
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Seme LAB |
GENERAL PURPOSE PNP TRANSISTOR A 1.40 (0.055) max. 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT A = 1.02 ± 0. |
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CSMSC |
Dual 105mW Headphone Amplifier systems. n LLP, MSOP, and SOP surface mount packaging The unity-gain stable HWD2108 can be configured by external n Switch on/off click suppression gain-setting resistors. n Excellent power supply ripple rejection n Unity-gain stable n Minimum |
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Semelab Plc |
Dual Bipolar PNP Devices cally sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Pin 4 – Collector 2 Pin 5 – Emitter 2 Pin 6 – Emitter 1 Min. Typ. Max. 60 Units V A Hz 0.05 100M Semelab Pl |
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Tyco Electronics |
Low Cost High IP3 Mixer |
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CSMSC |
3W Audio Power Amplifier ew external components and operate on low supply volt- ages from 2.0V to 5.5V. Since the HWD2171 does not require n No output coupling capacitors, bootstrap capacitors, or output coupling capacitors, bootstrap capacitors, or snubber snubber circui |
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Seme LAB |
Bipolar NPN Device emelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no r |
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Microchip |
Full Bridge SiC MOSFET Power Module The following are the key features of the MSCSM120HM16T3AG device: • SiC Power MOSFET – Low RDS(on) – High temperature performance • Very low stray inductance • Internal thermistor for temperature monitoring • Aluminum Nitride (AlN) substrate for imp |
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