No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
COMSET |
POWER TRANSISTORS • Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VDS ID IDpuls IAR EAR EAS VGS RDS(on) PT tJ tstg Drain-Source Voltage Continuous Drain Current TC= 27°C Pulsed Drain C |
|
|
|
Comset Semiconductors |
Power MOS Transistors • • • • • Nchannel Enhancement mode Avalanche-rated TO-220 envelope Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VDS IDS IDM IAR EAR EAS VGS RDS(on) PT tJ tstg Ratings http://www.DataSheet4U.net/ Value 200 14.5 58 14.5 9 200 20 0.2 95 -55 t |
|
|
|
Comset Semiconductors |
N-Channel Enhancement Mode Power MOS Transistors N channel in a plastic TO220 package. They are intended for use in switched mode power supplies, motor control, welding, DC-DC & DC-AC converters, and in general purpose switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS http://www |
|
|
|
Comset Semiconductors |
N-Channel Enhancement Mode Power MOS Transistors This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requ |
|
|
|
COMSET |
POWER TRANSISTORS • Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VDS IDS IDM IAR EAR EAS VGS RDS(on) PT tJ tstg Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Cu |
|
|
|
Comset Semiconductors |
N-Channel Enhancement Mode Power MOS Transistors N channel in a plastic TO220 package. They are intended for use in switched mode power supplies, motor control, welding, DC-DC & DC-AC converters, and in general purpose switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS http://www |
|