CDIL BCW fiche technique

No.	Partie #	Fabricant	Description
1	BCW61B	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS r –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperatu re Junction temperature –VCES –VCE0 –VEB0 –IC –lB Ptot Tstg Tj max. 32 V max. 32 V max. 5 V max. 200 mA max. 50 mA ma
2	BCW60A	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS se) Emitter –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb: 25 °C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient* CHARACTERISTICS Tamb = 25 °C unless otherw
3	BCW60C	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS se) Emitter –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb: 25 °C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient* CHARACTERISTICS Tamb = 25 °C unless otherw
4	BCW61A	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS r –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperatu re Junction temperature –VCES –VCE0 –VEB0 –IC –lB Ptot Tstg Tj max. 32 V max. 32 V max. 5 V max. 200 mA max. 50 mA ma
5	BCW61C	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS r –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperatu re Junction temperature –VCES –VCE0 –VEB0 –IC –lB Ptot Tstg Tj max. 32 V max. 32 V max. 5 V max. 200 mA max. 50 mA ma
6	BCW29	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS
7	BCW72	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS
8	BCW60B	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS se) Emitter –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb: 25 °C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient* CHARACTERISTICS Tamb = 25 °C unless otherw
9	BCW60D	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS se) Emitter –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb: 25 °C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient* CHARACTERISTICS Tamb = 25 °C unless otherw
10	BCW30	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS
11	BCW89	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS
12	BCW70	CDIL	Transistor
13	BCW66H	CDIL	Transistor pecified) Limiting values Collector –base voltage (open emitter) Collector –emitter voltage (open base) –VCBO –VCEO Emitter –base voltage (open collector) –VEBO Collector current (d.c.) –IC Total power dissipation at Tamb = 25°C Ptot Storage te
14	BCW67A	CDIL	Transistor BCW67C, 68H IC = 300 mA; VCE = 1 V BCW67A, 68F BCW67B, 68G BCW67C, 68H hFE min. max. hFE min. hFE min. hFE min. 250 630 35 60 100 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector –base voltage (open emitter) –VCBO C
15	BCW67B	CDIL	Transistor BCW67C, 68H IC = 300 mA; VCE = 1 V BCW67A, 68F BCW67B, 68G BCW67C, 68H hFE min. max. hFE min. hFE min. hFE min. 250 630 35 60 100 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector –base voltage (open emitter) –VCBO C
16	BCW67C	CDIL	Transistor BCW67C, 68H IC = 300 mA; VCE = 1 V BCW67A, 68F BCW67B, 68G BCW67C, 68H hFE min. max. hFE min. hFE min. hFE min. 250 630 35 60 100 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector –base voltage (open emitter) –VCBO C
17	BCW61D	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS r –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperatu re Junction temperature –VCES –VCE0 –VEB0 –IC –lB Ptot Tstg Tj max. 32 V max. 32 V max. 5 V max. 200 mA max. 50 mA ma
18	BCW65A	CDIL	GENERAL PURPOSE TRANSISTOR
19	BCW65B	CDIL	GENERAL PURPOSE TRANSISTOR
20	BCW65C	CDIL	GENERAL PURPOSE TRANSISTOR