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BCW60C |
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| Part Number | BCW60C |
| Manufacturer | CDIL |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon t... |
| Features |
se) Emitter –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb: 25 °C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient* CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector –emitter cut –off current VBE = 0; VCE = 32 V VBE = 0; VCE = 32V; Tamb = 150°C Emitter –base cut –off current IC = 0; VEB = 4 V Saturation voltages at IC = 10 mA; IB = 0,25 mA VCES VCE0 VEB0 IC IB Ptot Tstg Tj max. 32 V max. 32 V max. 5 V max. 200 mA max. 50 mA max. 250 mW –55 to +150° C max. 150 ° C 500 K / W Rth j –a = ICES... |
| Document |
 BCW60C Data Sheet
PDF 79.00KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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