No. | Partie # | Fabricant | Description | Fiche Technique |
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CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite |
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CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
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CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
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CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
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CDIL |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
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CDIL |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
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CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS n collector) –VEB0 BC807 max. 50 max. 45 max. 5 BC808 30 V 25 V 5V Collector current (DC) Collector current (peak value) Emitter current (peak value) Base current (DC) Base current (peak value) Total power dissipation at Tamb = 25 °C * Storage te |
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CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite |
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CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite |
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CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite |
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|
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite |
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CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
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|
|
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
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CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
|
|
CDIL |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
|
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|
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite |
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|
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite |
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|
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite |
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|
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite |
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CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite |
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