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BC808 |
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| Part Number | BC808 |
| Manufacturer | CDIL |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 ... |
| Features |
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–VEB0 BC807 max. 50 max. 45 max. 5 BC808 30 V 25 V 5V Collector current (DC) Collector current (peak value) Emitter current (peak value) Base current (DC) Base current (peak value) Total power dissipation at Tamb = 25 °C * Storage temperature Junction temperature –IC –ICM IEM –IB –IBM Ptot Tstg Tj max. max. max. max. max. max. max. 500 1000 1000 100 200 250 –55 to +150 150 mA mA mA mA mA mW °C °C THERMAL RESISTANCE* From junction to ambient Rth j –a = 500 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector cut –off current IE = 0; –VCB = 20V; Tj = 25°C IE... |
| Document |
 BC808 Data Sheet
PDF 192.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BC807 |
NXP |
PNP general purpose transistor |
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| 2 | BC807 |
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| 3 | BC807 |
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| 4 | BC807 |
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| 5 | BC807 |
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