| No. | Partie # | Fabricant | Description | Fiche Technique |
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CDIL |
SURFACE MOUNT SCHOTTKY DIODES TICS DESCRIPTION Forward Voltage Reverse Current Diode Capacitance (Ta=25º C unless specified otherwise) SYMBOL TEST CONDITION VF IF=1mA IF=10mA IF=15mA *IR VR=70V VR=50V Cd VR=0V, f=1MHz Per diode MIN MAX 0.41 0.75 1.00 10 0.1 2.0 Pulse Test: tp= |
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CDIL |
SURFACE MOUNT SCHOTTKY BARRIER DIODES dard mounting condition *Rth (j-a) 625 ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise) Per diode DESCRIPTION SYMBOL TEST CONDITION MIN Forward Voltage VF IF=1mA IF=10mA IF=15mA Reverse Current IR VR=70V VR=50V Change Car |
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CDIL |
SILICON PLANAR HIGH SPEED DIODES e Breakdown Voltage (Ta=25º C unless specified otherwise) SYMBOL TEST CONDITION VF V(BR)R IF=100mA IF=200mA IR=100µA **BAS19 BAS20 ***BAS21 MIN TYP MAX 1.00 1.25 120 200 250 UNIT V V V V V *Mounted on a ceramic substrate 0f 8mm x 10mm x 0.7mm |
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CDIL |
SILICON PLANAR HIGH SPEED DIODES e Breakdown Voltage (Ta=25º C unless specified otherwise) SYMBOL TEST CONDITION VF V(BR)R IF=100mA IF=200mA IR=100µA **BAS19 BAS20 ***BAS21 MIN TYP MAX 1.00 1.25 120 200 250 UNIT V V V V V *Mounted on a ceramic substrate 0f 8mm x 10mm x 0.7mm |
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CDIL |
SURFACE MOUNT SCHOTTKY DIODES TICS DESCRIPTION Forward Voltage Reverse Current Diode Capacitance (Ta=25º C unless specified otherwise) SYMBOL TEST CONDITION VF IF=1mA IF=10mA IF=15mA *IR VR=70V VR=50V Cd VR=0V, f=1MHz Per diode MIN MAX 0.41 0.75 1.00 10 0.1 2.0 Pulse Test: tp= |
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CDIL |
SURFACE MOUNT SCHOTTKY DIODES TICS DESCRIPTION Forward Voltage Reverse Current Diode Capacitance (Ta=25º C unless specified otherwise) SYMBOL TEST CONDITION VF IF=1mA IF=10mA IF=15mA *IR VR=70V VR=50V Cd VR=0V, f=1MHz Per diode MIN MAX 0.41 0.75 1.00 10 0.1 2.0 Pulse Test: tp= |
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CDIL |
SURFACE MOUNT SCHOTTKY BARRIER DIODES dard mounting condition *Rth (j-a) 625 ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise) Per diode DESCRIPTION SYMBOL TEST CONDITION MIN Forward Voltage VF IF=1mA IF=10mA IF=15mA Reverse Current IR VR=70V VR=50V Change Car |
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CDIL |
SURFACE MOUNT SCHOTTKY BARRIER DIODES dard mounting condition *Rth (j-a) 625 ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise) Per diode DESCRIPTION SYMBOL TEST CONDITION MIN Forward Voltage VF IF=1mA IF=10mA IF=15mA Reverse Current IR VR=70V VR=50V Change Car |
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CDIL |
SURFACE MOUNT SCHOTTKY DIODES |
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CDIL |
SILICON PLANAR SWITCHING DIODE V VR=75V, Tj=150ºC Cd VR=0V, f=1MHz Vfr IF=10mA, tP=20ns MIN Reverse Recovery Time When Switched from IF=10mA to trr IR=60mA, RL100 Ω, measured at IR=1mA Recovery Charge When Switched from QS IF=10mA to VR=5V, RL=100 Ω, BAS16 Rev_1 270304E TY |
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CDIL |
SURFACE MOUNT SCHOTTKY DIODES TICS DESCRIPTION Forward Voltage Reverse Current Diode Capacitance (Ta=25º C unless specified otherwise) SYMBOL TEST CONDITION VF IF=1mA IF=10mA IF=15mA *IR VR=70V VR=50V Cd VR=0V, f=1MHz Per diode MIN MAX 0.41 0.75 1.00 10 0.1 2.0 Pulse Test: tp= |
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CDIL |
SURFACE MOUNT SCHOTTKY BARRIER DIODES dard mounting condition *Rth (j-a) 625 ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise) Per diode DESCRIPTION SYMBOL TEST CONDITION MIN Forward Voltage VF IF=1mA IF=10mA IF=15mA Reverse Current IR VR=70V VR=50V Change Car |
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CDIL |
SURFACE MOUNT SCHOTTKY DIODES |
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CDIL |
SURFACE MOUNT SCHOTTKY DIODES |
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CDIL |
HIGH VOLTAGE SWITCHING DIODE AL CHARACTERISTICS (Ta=25º C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN Breakdown Voltage VBR IR=100mA 300 Forward Voltage ***VF IF=100mA Reverse Current IR VR=250V VR=250V, Ta=150ºC Reverse Recovery Time, when Swi |
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CDIL |
SILICON PLANAR HIGH SPEED DIODES e Breakdown Voltage (Ta=25º C unless specified otherwise) SYMBOL TEST CONDITION VF V(BR)R IF=100mA IF=200mA IR=100µA **BAS19 BAS20 ***BAS21 MIN TYP MAX 1.00 1.25 120 200 250 UNIT V V V V V *Mounted on a ceramic substrate 0f 8mm x 10mm x 0.7mm |
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CDIL |
SILICON PLANAR SCHOTTKY BARRIER DIODE C ºC ºC K/W MAX 0.24 0.32 0.40 0.50 0.80 2.3 10 UNIT V V V V V µA pF Continental Device India Limited Data Sheet Page 1 of 3 ø1.42 – 1.50 ø1.35 — 1.45 4.5 3.5 12.9 12.6 63.5 60.5 SOD 80C (LL-34) Mini MELF Hermetically Sealed Glass Package R0. |
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CDIL |
SILICON EPITAXIAL SWITCHING DIODE Measured at IR=1mA . UNIT V V mA mA A A A mW ºC ºC UNIT V V V V nA µA µA µA pF ns Continental Device India Limited Data Sheet Page 1 of 3 BAS216WS SOD-323 PLASTIC PCAKAGE Com pone nt D isposa l I nst r uct ions 1. CDI L Sem iconduct or Devic |
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