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BAS19 |
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| Part Number | BAS19 |
| Manufacturer | CDIL |
| Description | SYMBOL Continuous Reverse Voltage VR Repetitive Peak Reverse Voltage VRRM Non Repetitive Peak Forward Current t=1µs t=1s IFSM IFSM Average Rectified Forward Current (averaged over any 20 ms p... |
| Features |
e Breakdown Voltage
(Ta=25º C unless specified otherwise) SYMBOL TEST CONDITION
VF V(BR)R
IF=100mA IF=200mA IR=100µA **BAS19
BAS20
***BAS21
MIN TYP MAX 1.00 1.25
120 200 250
UNIT V V
V V V
*Mounted on a ceramic substrate 0f 8mm x 10mm x 0.7mm **Measured under pulse conditions; pulse time = tp=0.3ms. ***At zero life time measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V
BAS19_21 Rev_1 050503E
Continental Device India Limited
Data Sheet
Page 1 of 4
SILICON PLANAR HIGH SPEED DIODES
3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE
12
BAS19, BA... |
| Document |
 BAS19 Data Sheet
PDF 125.91KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BAS100ATB6 |
Pan Jit International |
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES |
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| 2 | BAS101 |
NXP |
High Voltage Switching Diodes |
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| 3 | BAS101S |
NXP |
High Voltage Switching Diodes |
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| 4 | BAS11 |
NXP |
Controlled avalanche rectifiers |
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| 5 | BAS116 |
nexperia |
Low-leakage diode |
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