| No. | Partie # | Fabricant | Description | Fiche Technique |
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Bruckewell Technology |
800V N-Channel MOSFET • RDS(on) (typ 1.3 Ω )@VGS=10V • Gate Charge (Typical 39nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (150°C) • Halogen Free Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/d |
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Bruckewell Technology |
700V N-Channel MOSFET • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant / Halogen free package available Absolute Maximum Ratings Parameter Drain-Source Voltage (Tc=25°C unless otherwise noted) Symbol VDS I |
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Bruckewell Technology |
N-Channel Enhancement Mode Power MOSFET VDS=600V • BVDSS=650V typically @ Tj=150°C • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package ●APPLICATION: • Open Framed Power Supply • Adapter • STB RDS(on)max = 2.0 @VGS = 10 |
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