| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STP80NF10 STB80NF10 VDSS 100 V 100 V RDS(on) max < 0.015 Ω < 0.015 Ω ■ Exceptional dv/dt capability ■ 100% Avalanche tested ■ Application oriented characterization ID 80 A 80 A Applications ■ Switching applications Description This Power |
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VBsemi |
N-Channel MOSFET • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC TO-263 G DS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain |
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ST Microelectronics |
N-CHANNEL POWER MOSFET Type STP80NF10 STB80NF10 VDSS 100 V 100 V RDS(on) max < 0.015 Ω < 0.015 Ω ■ Exceptional dv/dt capability ■ 100% Avalanche tested ■ Application oriented characterization ID 80 A 80 A Applications ■ Switching applications Description This Power |
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