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B80NF10 |
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| Part Number | B80NF10 |
| Manufacturer | VBsemi |
| Description | B80NF10-VB B80NF10-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.010 at VGS = 10 V 100 0.023 at VGS = 4.5 V ID (A) 100 85 FEATURES • TrenchFET®... |
| Features |
• TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC TO-263 G DS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C 100 ID 75 a A Pulsed Drain Current IDM 300 Avalanche Current Single Pulse Avalanche Energyb IAS 75 L = 0.1 mH EAS 280 mJ Maximum Power Dissipationb TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)d PD 250... |
| Document |
 B80NF10 Data Sheet
PDF 286.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | B80NF10 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 2 | B80NF06 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 3 | B80NF55-06 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 4 | B80NF55-06T |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 5 | B80NF55-08 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|