| No. | Partie # | Fabricant | Description | Fiche Technique |
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Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode • PG = 12 dB Typ. at 15 W /175MHz • 20:1 Load VSWR Capability • Omnigold™ Metalization System B S G C D F E D S Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS ID V(BR)DSS VDGR VGS PDISS TJ T STG θ JC O O G H I 5.0 A 40 V 40 V ± 20 V 95 W @ TC = 25 |
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Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode • PG = 14 dB Typ. at 15 W /175MHz • 10:1 Load VSWR Capability • Omnigold™ Metalization System B S G C D F E D S Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS ID V(BR)DSS VDGR VGS PDISS TJ T STG θ JC O O I GH 2.5 A 65 V 65 V ± 40 V 55 W @ TC = 25 C |
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Advanced Semiconductor |
VHF POWER MOSFET Channel Enhancement Mode • PG = 10 dB Typical at 175 MHz • 10:1 Load VSWR Capability • Omnigold™ Metalization System FULL R S D S D G F K Ø.125 NOM. C B G E H I J MAXIMUM RATINGS DIM MINIMUM inches / mm MAXIMUM inches / mm ID VDSS VGS PDISS TJ T STG θ JC 16 A 6 |
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Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode • PG = 13.5 dB Typical at 175 MHz • 10:1 Load VSWR Capability • Omnigold™ Metalization System S D Ø.125 NOM. C B G E H D G F S I J K MAXIMUM RATINGS DIM MINIMUM inches / mm MAXIMUM inches / mm ID VDSS VGS PDISS TJ T STG θ JC 16 A 125 V |
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Advanced Semiconductor |
VHF POWER MOSFET Silicon N-Channel Enhancement Mode • PG = 14 dB Typical at 175 MHz • η D = 55% Typ. at POUT = 300 Watts • Omnigold™ Metalization System E .1925 D C D D (4X).060 R M G H I F G N G Sources are connected to flange L J K MAXIMUM RATINGS ID V(BR)DSS VDGR VGS PDISS TJ T STG θ JC O |
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Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode • PG = 15 dB Typ. at 300W/ 175 MHz • 5:1 Load VSWR Capability • Omnigold™ Metalization System DIM G H I F G N G Source connected to flange J K MINIMUM inches / mm L MAXIMUM inches / mm MAXIMUM RATINGS ID VDSS VGS PDISS TJ T STG θ JC O O A B |
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Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode B • PG = 10 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ Metalization System F S G C D E D S Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS ID V(BR)DSS VDGR VGS PDISS TJ T STG θ JC O O I GH 7.0 A 60 V 60 V ± 20 V 100 W @ TC = 25 O |
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Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode INCLUDE: • PG = 14 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ Metalization System S G C D F E D S Ø.125 NOM. FULL R J .125 I GH MAXIMUM RATINGS ID VDSS VGS PDISS TJ T STG θ JC O 1.0 A 60 V ±40 V 17.5 W @ TC = 25 C -65 C to +2 |
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Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode • PG = 21 dB Typical at 175 MHz • η D = 50% Typical at POUT = 5 Watts • Omnigold™ Metalization System S ØB D S G ØC MAXIMUM RATINGS ID VDSS VDGR VGS PDISS TJ T STG θ JC 1.25 A 60 V 60 V ±40 V 17.5 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C |
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Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode • PG = 16 dB Typ. at 30 W /175 MHz • η D = 60% Typ. at 30 W /175 MHz • Omnigold™ Metalization System F S G C D E D S Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS ID V(BR)DSS VDGR VGS PDISS TJ T STG θ JC O I GH 6.0 A 120 V 120 V ± 40 V 115 W @ TC = |
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Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode • PG = 10 dB Typical at 175 MHz • 10:1 Load VSWR Capability • Omnigold™ Metalization System F S G C D E D S Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCB VCE PDISS TJ T STG θ JC O I GH 10 A DIM MINIMUM inches / mm MAXIMUM inches / mm 60 V |
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Advanced Semiconductor |
VHF POWER MOSFET • PG = 14 dB Typ. at 30 W /175MHz • 10:1 Load VSWR Capability • Omnigold™ Metalization System F G C D E S I GH MAXIMUM RATINGS ID V(BR)DSS VDGR VGS PDISS TJ TSTG θJC 5.0 A 65 V 65 V ± 40 V 100 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1 |
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