| No. | Partie # | Fabricant | Description | Fiche Technique |
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Advanced Semiconductor |
SILICON NPN PHOTO DETECTOR |
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Advanced Semiconductor |
PNP Silicon High Frequency Transistor D S E M I C O N D U C T O R, I N C. w w Specifications are subject to change without notice. .D a S a t e e h U 4 t MHz pF pF m o .c pS nS REV. B 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 |
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Advanced Semiconductor |
NPN Silicon RF Power Transistor INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS 3.3 A IC 10 A (PEAK) VCE PDISS TSTG θJC 30 V 70 W @ TC = 25 OC -65 OC to +200 OC 2.5 OC/W PACKAGE STYLE TO- 60 1 = EMITTER 2 = BASE 3 = COLLECTOR CASE = EMITTER CHARACTERI |
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Advanced Semiconductor |
NPN SILICON HIGH FREQUENCY TRANSISTOR • GPE = 6.0 dB Typ. at 1.0 GHz • FT = 1,500 MHz Typ. at 15 V/ 50 mA • Hermetic TO-39 Package MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 400 mA 55 V 30 V 3.5 W @ TC = 25 C -65 to +200 C -65 to +200 C 50 C/W O O O O 1 = Emitter 2 = Base 3 = Collec |
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Fairchild Semiconductor |
Advanced Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.197Ω (Typ.) Absolute Maximum Ratings S |
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