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Advanced Power Electronics |
AP70T03GH Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient |
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Advanced Power Electronics |
AP72T02GH Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Rthj-a . Maximum Thermal Resistance, Jun |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET A 2.1 A 8.3 A dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation Total Power Dissipation4 Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6 50 28.4 2 27 15 V/ns W W mJ V/ns TSTG TJ Stora |
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Advanced Power Electronics |
N-Channel MOSFET 56 1.25 450 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-c |
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Advanced Power Electronics |
AP72T03GH emperature Range BVDSS RDS(ON) ID 30V 9mΩ 62A GD S TO-252(H) G D S TO-251(J) Rating 30 + 20 62 44 190 60 0.4 29 24 -55 to 175 -55 to 175 Units V V A A A W W/℃ mJ A ℃ ℃ Thermal Data Symbol . Rthj-c Maximum Thermal Resistance, Junction-cas |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ssipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Va |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET J A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Rthj-a . Maximum Th |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
N-Channel MOSFET j-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit ℃/W Data and specifications subject to change without notice 20020507 AP7811M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parame |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 0.36 -55 to 175 -55 to 175 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, J |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.1 62 Units °C/W °C/W Ordering Information AP72T03GP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube) ©2010 Advanced Powe |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET n Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.9 62 Units ℃/W ℃/W Data and specifications subject to change without notice 200817071-1/4 AP75T |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET r Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 260 5.5 7 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal |
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Advanced Power Electronics |
N-Channel MOSFET unction Temperature Range 30 +20 60 43 195 53 -55 to 175 -55 to 175 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications s |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ng Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 260 5.5 7 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junc |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ssipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Va |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET J A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Rthj-a . Maximum Th |
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Advanced Power Electronics |
N-Channel Power MOSFET 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.9 6 |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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