AP730P Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheet, en stock, prix

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AP730P

Advanced Power Electronics
AP730P
AP730P AP730P
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Part Number AP730P
Manufacturer Advanced Power Electronics
Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching , ruggedized device design , low on-resistance and cost-effectiveness. The TO-220 package is unive...
Features ng Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 260 5.5 7 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.7 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200219032 AP730P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 400 2 - Typ. 0.36 30 35...

Document Datasheet AP730P Data Sheet
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