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Advanced Power Electronics |
AP3310GH Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 5.0 110 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200808155 AP3310GH/J Electrical Characteristics@Tj=25oC(unless otherwise specifi |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET unction Temperature Range 40 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 65 Units ℃/W ℃/W Data & specifications subject to chang |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Chip), VGS @ 10V5 Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range 30 +20 105 31 2 |
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Advanced Power Electronics |
P-Channel MOSFET on-ambient Max. Max. Value 5.0 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 201225023 AP3310H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown V |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Drain Current 1 Rating 600 + 30 10 6.5 40 174 2 Units V V A A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 50 10 -55 to 150 -55 to 150 Thermal |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.5 42 Units ℃/W ℃/W Data and specifications subject to change without notice 201216053-1/4 AP30N30WI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbo |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGE Gate-Emitter Voltage IC@TC= |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET e Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit ℃/W Data and specifications subject to change without notice 200511051-1/4 DataSheet 4 U .com www.DataSh |
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Advanced Power Electronics |
N-Channel MOSFET on-case Thermal Resistance Junction-ambient Max. Max. Value 6.4 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 200701031 AP3302H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) |
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Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Speed Switching ▼ Low Saturation Voltage V CE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. VCES IC C G C E TO-3P G E Parameter Rating 1200 +30 60 30 120 6 40 208 -55 to 150 - |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.4 40 Units ℃/W ℃/W 1 200906192 Data and specifications subject to change without notice AP30P10GS Electrical Cha |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. M |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET V GS @ 10V Pulsed Drain Current 1 Rating 600 ± 30 10 6.5 40 174 2 Units V V A A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 50 10 -55 to 150 - |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 00V -7 Qgc Gate-Collector Charge VGE=4V - 18 td(on) Turn-on Delay Time VCC=320V - 200 tr td(off) Rise Time Turn-off Delay Time IC=130A RG=10Ω - 1.3 - 600 tf Fall Time VGE=3.3V - 1.4 Cies Input Capacitance VGE=0V - 4000 Coes Output |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET ion Storage Temperature Range Operating Junction Temperature Range +25 -2.9 -2.3 -10 1.25 -55 to 150 -55 to 150 V A A A W ℃ ℃ Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject t |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET nge 450 30 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.6 40 Units ℃/W ℃/W Data and specifications subject to change without notice 200916 |
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Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR VCES ¡¿ ¡¿ ¡¿ ¡¿ 1200V 30A C High speed switching Low Saturation Voltage VCE(sat)=3.0V@IC=30A Industry Standard TO-3P Package RoHS Compliant IC G G C E TO-3P E www.DataSheet4U.com Absolute Maximum |
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Advanced Power Electronics |
N-Channel MOSFET on-case Thermal Resistance Junction-ambient Max. Max. Value 6.4 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 200701031 AP3302H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) |
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