No. | Partie # | Fabricant | Description | Fiche Technique |
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ADV |
3 Quadrants High temperature Triacs ◆ Repetitive Peak Off-State Voltage: 600V/800V ◆ R.M.S On-State Current ( IT(RMS)= 25 A ) ◆ High Commutation dv/dt ◆ High junction temperature operating capability ◆ These Devices are Pb-Free and are RoHS Compliant ◆ Isolated heatsink mounted , I |
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Vaishali Semiconductor |
Surface Mount • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional • 600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent cl |
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Joy-IT |
5V Relais module oltages via 5V output. !!!!! Caution !!!!! Working with voltages over 30V and a main voltage (230V) can harm your body or kill you. We advise you not to work with higher valtages unless you have the needed experience. !!!!! Caution !!!!! The output |
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Nais |
ULTRA SMALL AUTOMOTIVE RELAY • Ultra small size Twin type: 17.4(L)×14.0(W)×13.5(H)mm .685(L)×.551(W)×.531(H)inch Slim 1c type: 17.4(L)×7.2(W)×13.5(H)mm .685(L)×.283(W)×.531(H)inch • Twin (1 Form C × 2) Forward/reverse motor control is possible with a single relay. Twin type (8 |
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TAISOX |
High Density Polyethylene |
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Chinahaiso electronic |
MOSFET () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃) Absolute maximum ratings Characteristics T=25℃ unless otherwise noted Symbol BV DSS ID V GS E AS PD T STG Rθ JC |
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Chinahaiso |
MOSFET m MOSFET GFP 740 Parameter Gate threshold voltage Gate-Body leakage Current Zero Gate voltage Drain current Static drain-source on-resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Tur |
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NAiS |
MICRO-ISO/MICRO-280 RELAY • Low profile: 22.5 mm(L)×15 mm(W)×15.7 mm(H) .886 inch(L)×.591 inch(W)×.618 inch(H) • Low temperature rise Terminal temperature has been reduced compared with using our conventional product • Low sound pressure level Noise level has been reduced appr |
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AiSHi |
MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS |
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ETC |
Relais de SECURITE uissance de commutation min./max. VA Puissance de commutation min./max. W 2. 6 Pouvoir de coupure selon IEC/EN 60 947-5-1 AC 15 AC V/A contact NF: 230 / 2 contact NO: 230 / 3 DC 13 DC V/A contact NF: 24 / 2 contact NO: 24 / 2 2. 7 Durée de vie électr |
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Haiso |
N-channel power FET |
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Vaisala |
Ultrasonic Wind Sensor |
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Nais |
High Environmental Resistance • Subminiature size (19.8×11.1×6.4 mm) (.780×.437×.252 inch) • Sealed construction for use in adverse environment-Sealed construction by epoxy resin and rubber cap keeps off the cause of miscontact such as dust. Conforming to IP67* of IEC protective |
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TAISOX |
High Density Polyethylene |
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TAISOX |
High Density Polyethylene |
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TAISOX |
High Density Polyethylene |
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TAISOX |
High Density Polyethylene |
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TAISOX |
EVA Copolymers |
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Vaishali Semiconductor |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
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Nais |
(JS Relays) ULTRA-MINIATURE PC BOARD TYPE POWER RELAY 16 .630 JS RELAYS 22 .866 16 .630 mm inch • Ultra-miniature size with universal terminal footprint • High contact capacity: 10 A • Class B coil insulation type available • TV-5 type available 1 Form A type → TV-5 1 Form C type → TV-5 (N.O. side |
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