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AIS AIS DataSheet

No. Partie # Fabricant Description Fiche Technique
1
AIS25CH80

ADV
3 Quadrants High temperature Triacs
◆ Repetitive Peak Off-State Voltage: 600V/800V ◆ R.M.S On-State Current ( IT(RMS)= 25 A ) ◆ High Commutation dv/dt ◆ High junction temperature operating capability ◆ These Devices are Pb-Free and are RoHS Compliant ◆ Isolated heatsink mounted , I
Datasheet
2
SMG188

Vaishali Semiconductor
Surface Mount

• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in Unidirectional and Bidirectional
• 600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 %
• Excellent cl
Datasheet
3
KY-019

Joy-IT
5V Relais module
oltages via 5V output. !!!!! Caution !!!!! Working with voltages over 30V and a main voltage (230V) can harm your body or kill you. We advise you not to work with higher valtages unless you have the needed experience. !!!!! Caution !!!!! The output
Datasheet
4
ACT512

Nais
ULTRA SMALL AUTOMOTIVE RELAY

• Ultra small size Twin type: 17.4(L)×14.0(W)×13.5(H)mm .685(L)×.551(W)×.531(H)inch Slim 1c type: 17.4(L)×7.2(W)×13.5(H)mm .685(L)×.283(W)×.531(H)inch
• Twin (1 Form C × 2) Forward/reverse motor control is possible with a single relay. Twin type (8
Datasheet
5
9001

TAISOX
High Density Polyethylene
Datasheet
6
GFP50N06

Chinahaiso electronic
MOSFET
() Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃) Absolute maximum ratings Characteristics T=25℃ unless otherwise noted Symbol BV DSS ID V GS E AS PD T STG Rθ JC
Datasheet
7
GFP740

Chinahaiso
MOSFET
m MOSFET GFP 740 Parameter Gate threshold voltage Gate-Body leakage Current Zero Gate voltage Drain current Static drain-source on-resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Tur
Datasheet
8
ACV31212

NAiS
MICRO-ISO/MICRO-280 RELAY

• Low profile: 22.5 mm(L)×15 mm(W)×15.7 mm(H) .886 inch(L)×.591 inch(W)×.618 inch(H)
• Low temperature rise Terminal temperature has been reduced compared with using our conventional product
• Low sound pressure level Noise level has been reduced appr
Datasheet
9
CD11GHS

AiSHi
MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS
Datasheet
10
OA5612

ETC
Relais de SECURITE
uissance de commutation min./max. VA Puissance de commutation min./max. W 2. 6 Pouvoir de coupure selon IEC/EN 60 947-5-1 AC 15 AC V/A contact NF: 230 / 2 contact NO: 230 / 3 DC 13 DC V/A contact NF: 24 / 2 contact NO: 24 / 2 2. 7 Durée de vie électr
Datasheet
11
GFP8N60

Haiso
N-channel power FET
Datasheet
12
WS425

Vaisala
Ultrasonic Wind Sensor
Datasheet
13
ABS151040

Nais
High Environmental Resistance

• Subminiature size (19.8×11.1×6.4 mm) (.780×.437×.252 inch)
• Sealed construction for use in adverse environment-Sealed construction by epoxy resin and rubber cap keeps off the cause of miscontact such as dust. Conforming to IP67* of IEC protective
Datasheet
14
9000

TAISOX
High Density Polyethylene
Datasheet
15
9003

TAISOX
High Density Polyethylene
Datasheet
16
9002

TAISOX
High Density Polyethylene
Datasheet
17
9007

TAISOX
High Density Polyethylene
Datasheet
18
7350M

TAISOX
EVA Copolymers
Datasheet
19
3N187

Vaishali Semiconductor
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
Datasheet
20
JS1-5V

Nais
(JS Relays) ULTRA-MINIATURE PC BOARD TYPE POWER RELAY
16 .630 JS RELAYS 22 .866 16 .630 mm inch
• Ultra-miniature size with universal terminal footprint
• High contact capacity: 10 A
• Class B coil insulation type available
• TV-5 type available 1 Form A type → TV-5 1 Form C type → TV-5 (N.O. side
Datasheet



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