| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
UTC |
N-CHANNEL POWER MOSFET * RDS(ON)=1.1Ω @ VGSS=10V * High Switching Speed * Improved dv/dt Capability * 100% Avalanche Tested SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 9N65L-TA3-T 9N65G-TA3-T |
|
|
|
|
Potens semiconductor |
N-Channel MOSFETs Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available ID 9A TO220F Pin Configuration D G GDS S Applications High efficient switched mode power supplies TV Power Adapter/charger Server Power PV Inv |
|
|
|
|
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Applications • Power Factor Correction • LCD TV Power • Full |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise |
|
|
|
|
ON Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 79 mW • Ultra Low Gate Charge (Typ. Qg = 61 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 544 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / Se |
|
|
|
|
Diodes |
N-Channel MOSFET low onresistance and fast switching, making it ideal for high-efficiency power management applications. Applications Motor Control Backlighting DC-DC Converters Power Management Functions Features Low Input Capacitance High BVDSS Rating |
|
|
|
|
UBIQ |
N-Ch 650V Fast Switching MOSFETs z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 650V RDSON 1.1Ω ID 9A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ M |
|
|
|
|
UBIQ |
N-Ch 650V Fast Switching MOSFETs z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 650V RDSON 1.1Ω ID 9A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ M |
|
|
|
|
Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Off-line Power Supplies • Electronic Ballasts • High Power LED Lighting AM9N65P VDS (V) 650 PRODUCT SUMMARY rDS(on) (Ω) 1.7 @ VGS = 10V 1.8 @ V |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET 6 6 6 * ' 3RZHU)/$7[Ć+9 Figure 1. Internal schematic diagram ' * 6 $0Y Order code STL19N65M5 VDS 710 V RDS(on)max. 0.240 Ω ID (1) 12.5 A 1. The value is rated according to Rthj-case and limited by package. |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order codes VDSS @ TJmax RDS(on) max ID STFW69N65M5 STW69N65M5 710 V < 0.045 Ω 58 A ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Applications ■ Switchin |
|
|
|
|
UTC |
N-CHANNEL POWER MOSFET * RDS(ON) < 1.1Ω @ VGS=10 V, ID=4.5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free Package 9N65L-TA |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) =0.93Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
|
|
|
|
ON Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 70 mW • Ultra Low Gate Charge (Typ. Qg = 74 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 668 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS |
|
|
|
|
ON Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 79 mW • Ultra Low Gate Charge (Typ. Qg = 61 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 544 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / Se |
|
|
|
|
Potens semiconductor |
N-Channel MOSFETs Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications High efficient switched mode power supplies TV Power Adapter/charger Server Power PV Inverter / UPS Absolute Maximum Ratings Tc=25℃ un |
|
|
|
|
Potens semiconductor |
N-Channel MOSFETs Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications High efficient switched mode power supplies TV Power Adapter/charger Server Power PV Inverter / UPS Absolute Maximum Ratings Tc=25℃ un |
|
|
|
|
Din-Tek |
N-Channel MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (S |
|
|
|
|
Din-Tek |
N-Channel MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (S |
|